Dislocation Density Simulations for Bulk Single Crystal Growth Process Using Dislocation Kinetics Model

Abstract

Dislocation-free or low-dislocation density bulk semiconductor crystals such as Si, GaAs and InP are required for substrates of high-performance electronic or optical devices, because dislocations existing in substrate have adverse effects on the performance of devices. They are usually manufactured by the CZ (=Czochralski) or the LEC (=Liquid Encapsulated Czochralski) method. GaAs and InP crystals have low resolved shear stresses and are easy to generate and multiply dislocations due to thermal stress during the LEC growth, so it is an important technical problem to reduce the dislocations as low as possible. One of the methods to grow low-dislocation density crystals is to increase the crystal resistance to thermal stress by doping impurity atoms. As for a Si single crystal, growing a dislocation-free bulk single crystal of large diameter such as 12- or 16-inch remains to be solved in future.