Abstract
Optical nonlinearities [1–4] associated with excitonic absorption features in multiple quantum well (MQW) semiconductors [5] offer a number of useful functions for optoelectronics devices [6,7]. These include laser mode-locking elements, saturable elements for controlling the propagation of optical solitons in fibre transmission systems, all-optical bistable etalons, all-optical directional coupler switches and self-electro-optic devices for communications, signal processing and computing. The operation and optimisation of these devices rely on an understanding of the mechanisms which contribute to absorption saturation and the motion of optically generated electrons and holes in directions both parallel and perpendicular to the quantum wells. This chapter reviews measurements of exciton absorption saturation mechanisms and in-well transport processes relevant to new optoelectronic electro-optic and nonlinear optical devices.
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References
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Miller, A., Holden, T.M., Kennedy, G.T., Cameron, A.R., Riblet, P. (1998). Exciton Absorption Saturation and Carrier Transport in Quantum Well Semiconductors. In: Balkanski, M., Andreev, N. (eds) Advanced Electronic Technologies and Systems Based on Low-Dimensional Quantum Devices. NATO ASI Series, vol 42. Springer, Dordrecht. https://doi.org/10.1007/978-94-015-8965-9_4
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DOI: https://doi.org/10.1007/978-94-015-8965-9_4
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