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Anisotropic Melting of Semiconductors at Irradiation by Powerful Light Pulses

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High Power Lasers — Science and Engineering

Part of the book series: NATO ASI Series ((ASHT,volume 7))

Abstract

One of the interesting physical effects observed at the interaction of powerful optical irradiation with substance is the the effect of anisotropic local melting of the surface of semicondurtors [1–6].

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References

  1. Heinig, K.-H. (1985) Effect of local melting on semiconductor surfaces, in K. Hennig (ed.), Energy Pulse Modification of Semiconductors and Related Materials, Zentralinstitut für Kernforshung, Dresden, pp 265–279.

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© 1996 Springer Science+Business Media Dordrecht

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Fattakhov, Y.V., Bayazitov, R.M., Khaibullin, I.B., L’Vova, T.N. (1996). Anisotropic Melting of Semiconductors at Irradiation by Powerful Light Pulses. In: Kossowsky, R., Jelinek, M., Walter, R.F. (eds) High Power Lasers — Science and Engineering. NATO ASI Series, vol 7. Springer, Dordrecht. https://doi.org/10.1007/978-94-015-8725-9_34

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  • DOI: https://doi.org/10.1007/978-94-015-8725-9_34

  • Publisher Name: Springer, Dordrecht

  • Print ISBN: 978-90-481-4679-6

  • Online ISBN: 978-94-015-8725-9

  • eBook Packages: Springer Book Archive

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