Abstract
Rapid Thermal Processing (RTP) in the Compound Semiconductor technology has had a significant impact in making such a technology reliable and manufactureable. Since 1980 [1] RTP has been applied to achieving control of doping profiles, achieving implant activation and the application of advanced metallization systems. Since 1990 [2], RTP in the form of pulsed excimer laser processing has been applied to molecular beam epitaxial growth (MBE) for the development of high resistivity buffer lasers and for achieving the heterostructures necessary for high electron mobility transistors (HEMTs). The emphasis in the present paper is to review the GaAs device technology, the material problems and device structures and to show that RTP has removed key material problems which were bottlenecks in achieving a fabrication process which is reliable and high yield.
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References
M. Kuzuhara, H. Kohzu and N. Watanabe, Appl. Phys. Lett. , 41, 755 (1982).
S. U. Campisano, G. Futi, E. Rimini, F. Eisen and W. F. Tseng, J. Appl. Phys., 51, 295 (1980).
T. Mimura, S. Hiyamizu, T. Fujii and K. Nanbu, Jpn. J. Appl. Phys., 19, L2225–L227 (1980).
D. Delagebeauduf and N. T. Ling, IEEE Trans. Electron Devices, ED-29, 955 (1982).
K. Lee, M. Shur, T. J. Drummond and S. L. Lu, J. Vac. Sci. Technol., B1, 186 (1983).
K. Lee, M. S. Shur, T. J. Drummond, and H. Morkoç, IEEE Trans. Electron Devices, ED-30, 207 (1983).
M. Herzog and F. Koch, Appl. Phys. Lett., 53, 2620 (1988).
O. Wada and O. Ueda, Mat. Res. Soc. Symp. Proc., 184, 209 (1990).
C.J. Palmstron and D.V. Morgan, Metallizations for GaAs devices and circuits, in: “Gallium Arsenide-Materials, Devices, and Circuits”, M.J. Howes and D.V. Morgan, eds., John Wiley & Sons, Chichester (1985).
S.P. Kwok, J. Vac. Sci. Technol., B4, 1383 (1986).
S.P. Murarka, “Metallization-Theory and Practice for VLSI and ULSI”, Butterworth-Heineman, Boston (1993).
D.V. Morgan, H. Thomas, S. McClatchie, A. Christou, B. Marazas, and D.J. Diskett, Phys. Stat. Sol. (a), 138, K17 (1993).
J.S. Reid, E. Kolawa, R.P. Ruiz and M.-A. Nicolet, Thin Solid Films, 236, 319 (1993).
M. Piecuch, Rev. Phys. Appl., 23, 1727 (1985).
V. Dupuis, M.F. Ravet, C. Tete, M. Piecuch, and B. Vidal, J. Appl. Phys., 68, 3348 (1990).
H.P. Kattelus, E. Kolawa, K. Affolter, and M-A. Nicolet, J. Vac. Sci. Technol., A3, 2247 (1985).
W. Dorner, H. Mehrer, P.J. Pokela, E. Kolawa, and M-A. Nicolet, Mat. Sci. Eng., B10, 165 (1991).
D.V. Morgan and J. Wood, Appl. Surf. Sci., 38, 517 (1989).
K. Suguis, Y. Nakasaki, T. Inoue, S. Shima and M. Kashiwagi, Thin Solid Films, 166, 144 (1988).
K.N. Tu, J.W. Mayer, and L.C. Feldman, “Electronic Thin Film Science”, Macmillan, New York (1992).
G.V. Samsonov and I.M. Vinifskii, “Handbook of Refractory Compounds”, IFI/Plenum, New York (1980).
S-Q. Wang, S. Suthar, C. Hoeflich, and B.J. Burrow, J. Appl. Phys., 73, 2301 (1993).
J. Li, Y. Shacham-Diamand and J.W. Mayer, IEEE 1991 VMIC Conference, p. 153.
E.S.K. Menon, P. Huang, and M. Kraitchman, J.J. Hoyt, P. Chow, and D. de Fontaine, J. Appl. Phys., 73, 142 (1993).
A.N. Aleshin, V.K. Egorov, B.S. Bokstein and P.V. Kurkin, Thin Solid Films, 223, 51 (1993).
C. Apblett, D. Muira, M. Sullivan, and P.J. Ficalora, J. Appl. Phys., 71, 4925 (1992).
O. Taguchi, Y. Iijima, and K. Hirano, J. Japan. Institute of Metals, 54, 619 (1990).
A. Bruson and J.C. Yamegsni Noubeyo, Phys. Stat. Sol. (a), 138, 199 (1993).
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© 1996 Springer Science+Business Media Dordrecht
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Feng, T., Christou, A., Girginoudi, D., Hatzopoulos, Z. (1996). Rapid Thermal Processing of Contacts and Buffer Layers for Compound Semiconductor Device Technology. In: Roozeboom, F. (eds) Advances in Rapid Thermal and Integrated Processing. NATO ASI Series, vol 318. Springer, Dordrecht. https://doi.org/10.1007/978-94-015-8711-2_18
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DOI: https://doi.org/10.1007/978-94-015-8711-2_18
Publisher Name: Springer, Dordrecht
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