Abstract
Buried SixNy films, formed by ion implantation of 35 keV N+ ions in the dose range 2×1017−2×1018 ions/cm−2, are studied with Extended X-Ray Absorption Fine Structure (EXAFS) and Near-EXAFS (NEXAFS) recorded at the N-K-edge. The NEXAFS spectra are characterised by a strong resonance line (RL) which has been attributed to dipole electron transitions (1s to unoccupied p-orbitals) localised on a N dangling bond (db) defect. The activation energy for the annealing of the N db defect, as calculated from isochronal annealing steps, is 320 meV. Analysis of the EXAFS spectra from the as-implanted and annealed films indicates that sub-nitrides are formed upon implantation. These nitrides are characterised by a Si-N bond length which is comparable to that of the reference nitride, while the coordination number in the 1st and 2nd shells, N1 and N2 respectively, is lower than that in the reference nitride. This stoichiometry deviation, as measured from the value of N1, which is 1.7 instead of 3 for the N-rich film fabricated with a dose of 2×1018 cm2, supports the argument that the RL in the NEXAFS spectra is due to dangling bonds localised on the N atom.
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© 1995 Springer Science+Business Media Dordrecht
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Paloura, E.C., Mertens, A., Grekos, P., Frentrup, W. (1995). Characterisation of Nearly Stoichiometric Buried SixNy Films with EXAFS and NEXAFS. In: Misaelides, P. (eds) Application of Particle and Laser Beams in Materials Technology. NATO ASI Series, vol 283. Springer, Dordrecht. https://doi.org/10.1007/978-94-015-8459-3_47
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DOI: https://doi.org/10.1007/978-94-015-8459-3_47
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