Skip to main content

Applications of High Energy Ion Scattering in Materials Science

  • Chapter
Application of Particle and Laser Beams in Materials Technology

Part of the book series: NATO ASI Series ((NSSE,volume 283))

  • 447 Accesses

Abstract

The fundamentals of High Energy Ion Scattering (possibly combined with channelling) are discussed in relation to the accuracy required for materials science studies and in relation to characteristics of competing surface analysis techniques. The extreme versatility of ion scattering techniques is demonstrated by a survey through many application areas in materials science, ranging from plastics to oxydic insulators, semiconductors and metals.

This is a preview of subscription content, log in via an institution to check access.

Access this chapter

Chapter
USD 29.95
Price excludes VAT (USA)
  • Available as PDF
  • Read on any device
  • Instant download
  • Own it forever
eBook
USD 259.00
Price excludes VAT (USA)
  • Available as PDF
  • Read on any device
  • Instant download
  • Own it forever
Softcover Book
USD 329.99
Price excludes VAT (USA)
  • Compact, lightweight edition
  • Dispatched in 3 to 5 business days
  • Free shipping worldwide - see info
Hardcover Book
USD 329.99
Price excludes VAT (USA)
  • Durable hardcover edition
  • Dispatched in 3 to 5 business days
  • Free shipping worldwide - see info

Tax calculation will be finalised at checkout

Purchases are for personal use only

Institutional subscriptions

Preview

Unable to display preview. Download preview PDF.

Unable to display preview. Download preview PDF.

References

  1. Chu W.K., Mayer J.W. and Nicolet M.A., Backscattering Spectrometry, Academic Press, New York (1978).

    Google Scholar 

  2. Feldman L.C., Mayer J.W. and Picraux S.T., Materials Analysis by Ion Channeling, Academic Press, New York (1982).

    Google Scholar 

  3. Ziegler J.F., Helium: Stopping Powers and Ranges in All Elemental Matter, Pergamon Press, New York (1977).

    Google Scholar 

  4. Tamminga Y., Willemsen M.F.C., Habraken F.H.P.M. and Kuiper A.E.T., High resolution Rutherford backscattering spectrometry and the analysis of very thin silicon nitride layers, Nucl. Instr. and Meth. 200, 499 (1982).

    Article  CAS  Google Scholar 

  5. Boerma D.O., Labohm F. and Reinders J.A., Design of a magnetic spectrograph for surface, interface and thin-layer analysis, Nucl. Instr. and Meth. B50, 291 (1990)

    CAS  Google Scholar 

  6. Rutherford E., The scattering of a and ß particles by matter and the structure of the atom, Philos. Mag. 21, 669 (1911).

    CAS  Google Scholar 

  7. Doyle B.L., Knapp J.A. and Buller D.L., Heavy Ion Backscattering Spectrometry (HIBS) — An improved technique for trace element detection, Nucl. Instr. and Meth. B42, 295 (1989).

    CAS  Google Scholar 

  8. Knapp J.A. and Doyle B.L., Heavy Ion Backscattering Spectrometry (HIBS) for high-sensitivity surface impurity detection, Nucl. Instr. and Meth. B45, 143 (1990).

    CAS  Google Scholar 

  9. Bozoian M, Thresholds of non-Rutherford nuclear cross sections for ion beam analysis, Nucl. Instr. and Meth. B56/57, 740 (1991).

    Google Scholar 

  10. Bozoian M., Deviations from Rutherford backscattering for Z=1,2 projectiles, Nucl. Instr. and Meth. B58, 127 (1992).

    Google Scholar 

  11. Hubbard K.M., Tesmer J.R., Nastasi M. and Bozoian M., Measured deviations from Rutherford backscattering cross sections using Li-ion beams, Nucl. Instr. and Meth. B58, 121 (1992).

    Google Scholar 

  12. L’Ecuyer J., Davies J.A. and Matsunami N., How accurate are absolute Rutherford backscattering yields, Nucl. Instr. and Meth. 160, 337 (1979).

    Article  Google Scholar 

  13. Barbour J.C., Doyle B.L. and Myers S.M., Measurement of the oxygen content in high-Tc superconductors: enhanced resonant ion-scattering analysis, Phys. Rev. B38, 7005 (1988).

    Google Scholar 

  14. Vink A.T., Roksnoer P.J., Maes J.W.F.M., Vriezema C.J., van I’Jzendoorn L.J. and Zalm P.C., Sharp boron spikes in silicon grown at reduced and atmospheric pressure by fast-gas-switching CVD, Jap. J. Appl. Phys. 29, L2307 (1990).

    Article  CAS  Google Scholar 

  15. Pászti F., Manuaba A., Hajdu C., Melo A.A. and da Silva M.F., Current measurements on MeV energy ion beams, Nucl. Instr. and Meth. B47, 187 (1990).

    Google Scholar 

  16. Doolittle L.R., Algorithms for the rapid simulation of Rutherford baclscattering spectra, Nucl. Instr. and Meth. B9, 344 (1985).

    CAS  Google Scholar 

  17. Diebold A.C., Maillot P., Gordon M., Baylis J., Chacon J., Witowski R., Arlinghaus H.F., Knapp J.A. and Doyle B.L., Evaluation of surface analysis methods for characterisation of trace metal surface contaminants found in silicon integrated circuit manufacturing, J. Vac. Sci. Technol. A10, 2945 (1992).

    Google Scholar 

  18. Niehus H., Heiland W. and Taglauer E., Low energy ion scattering at surfaces, Surface Science Reports 17, 252 (1993).

    Article  Google Scholar 

  19. de Jong A.M., Borg H.J., van I’Jzendoorn L.J., Soudant V.G.F.M., de Beer V.H.J., van Veen J.A.R. and Niemantsverdriet J.W., Sulfidation mechanism of Molybdenum catalysts supported on a SiO2/Si(100) model support studied by surface spectroscopy, J. Phys. Chem. 97, 6477 (1993).

    Article  Google Scholar 

  20. Murarka S.P., Silicides for VLSI Applications, Academic Press, New York (1983).

    Google Scholar 

  21. Hensel J.C., Levi A.F.J., Tung R.T. and Gibson J.M., Transistor action in Si/CoSi2/Si heterostructures, Appl. Phys. Lett. 47, 151 (1985).

    Article  CAS  Google Scholar 

  22. White A.E., Short K.T., Dynes R.C., Garno J.P. and Gibson J.M., Mesotaxy: Single-crystal growth of burried CoSi2 layers, Appl. Phys. Lett. 50, 95 (1987).

    Article  CAS  Google Scholar 

  23. van Ommen A.H., Ottenheim J.J.M., Theunissen A.M.L. and Mouwen A.G., Synthesis of heteroepitaxial Si/CoSi2/Si structures by Co implantation into Si, Appl. Phys. Lett. 53, 669 (1988).

    Article  Google Scholar 

  24. Raaymakers I.J.M.M., van I’Jzendoorn L.J., Theunissen A.M.L. and Kim K.B., Nucleation phenomena during titanium silicon reaction, Mat. Res. Soc. Symp. Proc. 146, 267 (1989).

    Article  Google Scholar 

  25. Hung L.S., Gyulai J., Mayer J.W., Lau S.S. and Nicolet M.A., Kinetics of TiSi2 formation by thin Ti films on silicon, J. Appl. Phys. 54, 5076 (1983).

    Article  CAS  Google Scholar 

  26. Picraux S.T., Chu W.K., Allen W.R. and Ellison J.A., Channeling analysis of strain in superlattices, Nucl. Instr. and Meth. B15, 306 (1986).

    CAS  Google Scholar 

  27. Chu W.K., Allen W.R., Picraux S.T. and Ellison J.A., Planar channeling in superlattices III. Potential and parameter dependence of catastrophic dechanneling, Phys. Rev. B42, 5923 (1990).

    Google Scholar 

  28. Visser R.J., Schellekens J.P.W., Reuhman-Huisken M.E. and van I’Jzendoorn L.J., Mechanism and kinetics of silylation of resist layers from the gas phase, Proc. SPIE 771, 111 (1987).

    Article  CAS  Google Scholar 

  29. van I’Jzendoorn L.J. and Schellekens J.P.W.: (a) Degradation effects and Si-depth profiling in photoresists using ion beam analysis, Nucl. Instr. and Meth. B40/41, 806 (1989); (b) Si depth profiling with Rutherford backscattering in photoresist layers; a study on the effects of degradation, J. Appl. Phys. 65, 799 (1989).

    Google Scholar 

  30. Mills P.J., Palmstrom C.J., Kramer E.J., Polydispersity effects on diffusion in polymers: concentration profiles of d-polystyrene measured by forward recoil spectrometry, J. Mater. Sci. 21, 1479 (1986).

    Article  CAS  Google Scholar 

  31. Meyer O., Geerk J., Li Q., Linker G. and Xi X.X., Epitaxial growth analysis of YBaCuO thin films by ion backscattering and channeling spectrometry, Nucl. Instr. and Meth. B45, 483 (1990).

    CAS  Google Scholar 

  32. Sharma R.P., Rehn L.E., Baldo P.M. and Liu J.Z., Direct evidence of anomalous Cu-0 vibrational modes near Tc in ErBa2Cu307-δ, Phys. Rev. Lett. 62, 2869 (1989).

    Article  CAS  Google Scholar 

  33. Kobs K., Dimigen H., Denissen C.J.M., Gerritsen E., Politiek J., van I’Jzendoorn L.J., Oechsner R., Kluge A. and Rijssel H., Friction reduction and zero wear for 52100 bearing steel by high-dose implantation of carbon, Appl. Phys. Lett. 57, 1622 (1990).

    Article  CAS  Google Scholar 

  34. Andersen J.U., Andreason O., Davies J.A. and Uggerhoj E., The use of channeling-effect techniques to locate interstitial foreign atoms in silicon, Rad. Eff. 7, 25 (1971).

    Article  CAS  Google Scholar 

  35. Smulders P.J.M., Boerma D.O., Bech Nielsen B. and Swanson M.L., Lattice site location of clustered boron atoms in silicon, Nucl. Instr. and Meth. B45, 438 (1990).

    CAS  Google Scholar 

  36. Kurup M.B., Prassat K.G., Sharma R.P. and Boerma D.O., Lattice location of Hf implanted in cubic Al, Cu and Ag host metals, Nucl. Instr. and Meth. B13, 68 (1986).

    CAS  Google Scholar 

  37. Flagmeyer R., RBS analysis of heteroepitaxial layered structures, Nucl. Instr. and Meth. B68, 190 (1992).

    CAS  Google Scholar 

  38. van I’Jzendoorn L.J., v.d. Walle G.F.A., van Gorkum A.A., Theunissen A.M.L., v.d. Heuvel R.A. and Barrett J.H., Diffusion and strain relaxation in Si/Sii.xGex/Si structures studied with Rutherford backscattering spectrometry, Nucl. Instr. and Meth. B50, 127 (1990).

    Google Scholar 

  39. v.d. Walle G.F.A., Fredriksz C.W., van Gorkum A.A., v.d. Heuvel R.A., Bulle-Lieuwma C.W.T. and van I’Jzendoorn L.J., Characterisation of strain in Sii_xGex/Si multilayers and superlattices grown by molecular beam epitaxy, Philips J. Res. 44, 141 (1989).

    Google Scholar 

Download references

Author information

Authors and Affiliations

Authors

Editor information

Editors and Affiliations

Rights and permissions

Reprints and permissions

Copyright information

© 1995 Springer Science+Business Media Dordrecht

About this chapter

Cite this chapter

van Ijzendoorn, L.J. (1995). Applications of High Energy Ion Scattering in Materials Science. In: Misaelides, P. (eds) Application of Particle and Laser Beams in Materials Technology. NATO ASI Series, vol 283. Springer, Dordrecht. https://doi.org/10.1007/978-94-015-8459-3_21

Download citation

  • DOI: https://doi.org/10.1007/978-94-015-8459-3_21

  • Publisher Name: Springer, Dordrecht

  • Print ISBN: 978-90-481-4510-2

  • Online ISBN: 978-94-015-8459-3

  • eBook Packages: Springer Book Archive

Publish with us

Policies and ethics