Skip to main content
  • 209 Accesses

Abstract

In many devices the concentration of holes and electrons are more or less of the same order of magnitude. In this case both types of carriers have to be considered in the Monte Carlo model. The scattering rates and the band structure of the two species of charged particles differ considerably, as we have seen in Chapters 3 and 4. We now have to define superholes in a similar way as superelectrons; each superhole represents a number of real ones. Two kinds of mobile particles enter the charge distribution term of the field equation; for each field-adjusting time step, transport histories of all the electrons and the holes have to be simulated. During simulation it is, for each time step, recommended to follow all the electrons first, then the holes. The reason for this will become clear when studying recombination of electron-hole pairs.

This is a preview of subscription content, log in via an institution to check access.

Access this chapter

Chapter
USD 29.95
Price excludes VAT (USA)
  • Available as PDF
  • Read on any device
  • Instant download
  • Own it forever
eBook
USD 169.00
Price excludes VAT (USA)
  • Available as PDF
  • Read on any device
  • Instant download
  • Own it forever
Softcover Book
USD 219.99
Price excludes VAT (USA)
  • Compact, lightweight edition
  • Dispatched in 3 to 5 business days
  • Free shipping worldwide - see info
Hardcover Book
USD 219.99
Price excludes VAT (USA)
  • Durable hardcover edition
  • Dispatched in 3 to 5 business days
  • Free shipping worldwide - see info

Tax calculation will be finalised at checkout

Purchases are for personal use only

Institutional subscriptions

Preview

Unable to display preview. Download preview PDF.

Unable to display preview. Download preview PDF.

Author information

Authors and Affiliations

Authors

Rights and permissions

Reprints and permissions

Copyright information

© 1993 C. Moglestue

About this chapter

Cite this chapter

Moglestue, C. (1993). Ambipolar Devices. In: Monte Carlo Simulation of Semiconductor Devices. Springer, Dordrecht. https://doi.org/10.1007/978-94-015-8133-2_11

Download citation

  • DOI: https://doi.org/10.1007/978-94-015-8133-2_11

  • Publisher Name: Springer, Dordrecht

  • Print ISBN: 978-90-481-4008-4

  • Online ISBN: 978-94-015-8133-2

  • eBook Packages: Springer Book Archive

Publish with us

Policies and ethics