Abstract
This paper discusses progress made in the development of techniques for manufacture of submicron area superconductor/insulator/superconductor junctions executed in niobium nitride. The junctions are meant for use as mixers in integrated planar multi-beam array receivers in the 100 to 800 GHz frequency range. Sputtered thin film NbN/MgO/NbN metallized sandwiches are plasma etched into mesa junctions. Standard 1.5 μm UV lithography is used to deposit the smallest possible junctions. Selective over-etching of the upper NbN layer, with MgO acting as the etch-stop, further reduces the area from that produced by the lithography. The smallest junctions produced so far have areas of 3 μm2, but areas as small as 0.2 μm2 appear possible.
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© 1990 Springer Science+Business Media Dordrecht
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Vaneldik, J.F., Routledge, D., Brett, M. (1990). Techniques in Small Area SIS NbN Junction Manufacture. In: Watt, G.D., Webster, A.S. (eds) Submillimetre Astronomy. Astrophysics and Space Science Library, vol 158. Springer, Dordrecht. https://doi.org/10.1007/978-94-015-6850-0_29
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DOI: https://doi.org/10.1007/978-94-015-6850-0_29
Publisher Name: Springer, Dordrecht
Print ISBN: 978-94-015-6852-4
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