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Fundamental Limits of Control Networks

Chapter
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Part of the Electrical/Computer Science and Engineering Series book series (NRECSES)

Abstract

This chapter contains a general treatment of the best switching, duplexing, and phase shifting performance obtainable from PIN diodes, recognizing that practical PIN’s must necessarily have both finite capacitance and resistance and bounds on the RF voltages and currents that can be sustained. It is fortunate for the designers of PIN circuitry that such maximum RF performance capabilities can be defined and evaluated analytically — even though the diode parameters may have to be measured experimentally. It is possible to say in advance, given the listing of diode parameters, just what switching insertion loss and power handling capability can be obtained per diode. From this estimate a decision can be made about how many diodes are needed and whether the task is practical even before the specific switching circuit has been selected.

Keywords

Reverse Bias Insertion Loss Forward Bias Switching Circuit Diode Parameter 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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References

  1. [1]
    Hines, M.E.: “Fundamental Limitations in RF Switching and Phase Shifting Using Semiconductor Diodes,” Proceedings of the IEEE, Vol. 52, No. 6, pp. 697–708, June 1964.CrossRefGoogle Scholar
  2. [2]
    CRC Standard Mathematical TablesTenth Edition; Chemical Rubber Publishing Co., Cleveland, Ohio, 1955; p. 14 (change of logarithm base) and p. 320 (Taylor series expansion for natural logarithm).Google Scholar

Copyright information

© Van Nostrand Reinhold Company 1982

Authors and Affiliations

  1. 1.Microwave Associates, Inc.BurlingtonUSA

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