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Practical PIN Diodes

Chapter
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Part of the Electrical/Computer Science and Engineering Series book series (NRECSES)

Abstract

The selection of a PIN to perform a particular microwave switching function begins with the choice of the size of the I region — specifically, its thickness, W, and cross sectional area, A. In practice, however, this characterization is usually accomplished using the related variables junction capacitance, CJ, which depends upon both A and W, and bulk breakdown voltage, VBB, which is proportional to W. What are the basic considerations in making these selections?

Keywords

Junction Temperature Reverse Bias Voltage Thermal Time Constant Reverse Resistance Thermal Path 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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References

  1. [1]
    Hines, M.E.: “Fundamental Limitations in RF Switching and Phase Shifting Using Semiconductor Diodes,” Proceedings of the IEEE, Vol. 52, No. 6, pp. 697–708, June 1964.CrossRefGoogle Scholar
  2. [2]
    ITT Reference Data for Radio EngineersFifth Edition; Howard W. Sams and Co. Inc., New York, 1974.Google Scholar
  3. [3]
    Mortenson, K.E.: “Analysis of the Temperature Rise in PIN Diodes Caused by Microwave Pulse Dissipation,” IEEE Transactions on Electron Devices, Vol. ED-13, No. 3, pp. 305–314, March 1966. Also Mortenson’s Variable Capacitance Diodes, Artech House, Dedham, Massachusetts, 1975.CrossRefGoogle Scholar

Copyright information

© Van Nostrand Reinhold Company 1982

Authors and Affiliations

  1. 1.Microwave Associates, Inc.BurlingtonUSA

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