Skip to main content

Diodes and Power Transistors

  • Chapter
Book cover Semiconductor Power Electronics

Abstract

A knowledge of quantum mechanics and solid-state physics is necessary background for comprehending the details of the operation of semiconductor devices. However, for this text, it is sufficient to have a general understanding of transistor behavior. The following description is intended to present a physical explanation of bipolar transistor operation, which will provide the basis for power transistor application limitations and unique characteristics [1], [2].

This is a preview of subscription content, log in via an institution to check access.

Access this chapter

Chapter
USD 29.95
Price excludes VAT (USA)
  • Available as PDF
  • Read on any device
  • Instant download
  • Own it forever
eBook
USD 39.99
Price excludes VAT (USA)
  • Available as EPUB and PDF
  • Read on any device
  • Instant download
  • Own it forever
Softcover Book
USD 54.99
Price excludes VAT (USA)
  • Compact, lightweight edition
  • Dispatched in 3 to 5 business days
  • Free shipping worldwide - see info

Tax calculation will be finalised at checkout

Purchases are for personal use only

Institutional subscriptions

Preview

Unable to display preview. Download preview PDF.

Unable to display preview. Download preview PDF.

References

  1. RCA Transistor, Thyristor and Diode Manual. Somerville, NJ: RCA Corporation, 1971, pp. 3–8.

    Google Scholar 

  2. Comer, Donald T. Large Signal Transistor Circuits. Englewood Cliffs, NJ: Prentice-Hall, Inc., 1967.

    Google Scholar 

  3. Searle, C.L., et al. Elementary Circuit Properties of Transistors. New York: John Wiley & Sons, 1964, pp. 6–7.

    Google Scholar 

  4. Comer, Donald T. Op. cit., pp. 21–26, 37–39.

    Google Scholar 

  5. Searle, C.L. Op. cit., pp. 37–54.

    Google Scholar 

  6. Ibid., pp. 21–24.

    Google Scholar 

  7. Comer, Donald T. Op. cit., pp. 28–34.

    Google Scholar 

  8. RCA Transistor, Thyristor and Diode Manual. Op. cit., pp. 12–15.

    Google Scholar 

  9. RCA Designer’s Handbook Solid State Power Circuits. Somerville, NJ: RCA Corporation, 1971, pp. 99–112.

    Google Scholar 

  10. Roehr, William D., et al. Switching Transistor Handbook. Phoenix: Motorola, Inc., 1970, pp. 14–23.

    Google Scholar 

  11. Hower, P. L. Optimum Design of Power Transistor Switches. IEEE Transactions on Electron Devices ED-20: April 1973, pp. 426–435.

    Google Scholar 

  12. Power Data Book. Mountain View, CA: Fairchild Camera and Instrument Corporation, 1976, chap. 1.

    Google Scholar 

  13. Owyang K., and Shafer, P. A New Power Transistor Structure for Improved Switching Performance. Washington, DC: IEEE International Electron Devices Meeting, December 1978. (Also available as General Electric Application Note 660.37.)

    Google Scholar 

  14. Pelly, Brian R. Power Semiconductor Devices—A Status Review. Orlando: IEEE/IAS International Semiconductor Power Converter Conference Record, 1982, pp. 1–19.

    Google Scholar 

  15. RCA Designer’s Handbook Solid State Power Circuits. Op. cit., pp. 113–149.

    Google Scholar 

  16. Hunter, Lloyd P., ed. Handbook of Semiconductor Electronics, 3d ed. New York: McGraw- Hill Book Company, 1970, pp. 19–8 through 19–15.

    Google Scholar 

  17. RCA Transistor, Thyristor and Diode Manual. Op. cit., pp. 17–37.

    Google Scholar 

  18. RCA Designer’s Handbook: Solid State Power Circuits. Op. cit., pp. 123–126.

    Google Scholar 

  19. Ibid., pp. 175–182.

    Google Scholar 

  20. Thyristor and Diode Manual. Op. cit., pp. 30–35.

    Google Scholar 

  21. RCA Designer’s Handbook: Solid State Power Circuits. Op. cit., pp. 126–134.

    Google Scholar 

  22. The Power Semiconductor Data Book for Design Engineers, 1st ed. Dallas: Texas Instruments, Inc., pp. 11–4 through 11–17.

    Google Scholar 

  23. Power Data Book. Mountain View, CA: Fairchild Camera and Instrument Corporation, 1976, chap. 2.

    Google Scholar 

  24. Ghandi, Sarab K. Semiconductor Power Devices. New York: John Wiley & Sons, 1977, pp. 172–183.

    Google Scholar 

  25. Hawkins, H.R. Mechanisms of Secondary Breakdown in Power Transistors. Kokomo: Delco Electronics, May 12, 1977.

    Google Scholar 

  26. Bennett, Wilfred P., and Kumbatovic, Robert A. Power and Energy Limitations of Bipolar Transistors Imposed by Thermal-Mode and Current-Mode Second-Breakdown Mechanisms. IEEE Transactions on Electron Devices ED-28: October 1981, pp. 1154–1162.

    Article  Google Scholar 

  27. SCR Manual, 6th ed. Auburn, NY: General Electric, 1979, pp. 37–42.

    Google Scholar 

  28. Gutzwiller, F. W., and Sylvan, T. P. Power Semiconductors Under Transient and Intermittent Loads. AIEE Transactions, Part I, Communications and Electronics, January 1961, pp. 699–706.

    Google Scholar 

  29. Westinghouse Silicon Power Transistor Handbook. Youngwood, PA: Westinghouse Electric, 1967, pp. 2–19 through 2–22.

    Google Scholar 

  30. Hower, P. L., and Tarneja, K. S. The Influence of Circuit and Device Parameters on the Switching Performance of Power Transistors. Power Conversion International 6, July/August 1980, pp. 10–22.

    Google Scholar 

Download references

Author information

Authors and Affiliations

Authors

Rights and permissions

Reprints and permissions

Copyright information

© 1986 Van Nostrand Reinhold Company Inc.

About this chapter

Cite this chapter

Hoft, R.G. (1986). Diodes and Power Transistors. In: Semiconductor Power Electronics. Van Nostrand Reinhold Electrical/Computer Science and Engineering Series. Springer, Dordrecht. https://doi.org/10.1007/978-94-011-7015-4_2

Download citation

  • DOI: https://doi.org/10.1007/978-94-011-7015-4_2

  • Publisher Name: Springer, Dordrecht

  • Print ISBN: 978-94-011-7017-8

  • Online ISBN: 978-94-011-7015-4

  • eBook Packages: Springer Book Archive

Publish with us

Policies and ethics