Abstract
Several studies of plasma-assisted etching were reported in the mid-1970s which demonstrated the importance of energetic ion bombardment [1–3]. In this work the terms chemical sputtering [2] and reactive ion etching RIE [3] were introduced. Subsequently, directed beam studies [4] showed more clearly the synergism between energetic ions and chemically reactive species incident on surfaces on which the reactive species can react with the surface to form volatile products.
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Coburn, J.W. (1997). The Role of Ions in Reactive Ion Etching with Low Density Plasmas. In: Williams, P.F. (eds) Plasma Processing of Semiconductors. NATO ASI Series, vol 336. Springer, Dordrecht. https://doi.org/10.1007/978-94-011-5884-8_3
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DOI: https://doi.org/10.1007/978-94-011-5884-8_3
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