Abstract
The application of broad low energy ion beams in recent surface and thin film technology [1–4] is often superior to plasma based processing where the respective surface or thin film structure is in direct contact with the bulk of a low pressure discharge. This is mainly due to the directionality, but even more to the high flexibility of ion beams with respect to their energy and composition. Thus, the versatility for the generation of thin films with specific properties can be decisively expanded in comparison to “random” processes as evaporation or sputtering by the accurate control of the kinetic properties or the angle of incidence of the arriving species. Well collimated, low energy beams of inert or reactive ions may sometimes prove as a better means for mask assisted etching particularly in the sub-micron regime than ion extraction through a thin plasma edge sheath which is influenced by the changing contours of the developing structure.
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© 1997 Springer Science+Business Media Dordrecht
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Oechsner, H. (1997). Low Energy Plasma Beams for Semiconductor Technology. In: Williams, P.F. (eds) Plasma Processing of Semiconductors. NATO ASI Series, vol 336. Springer, Dordrecht. https://doi.org/10.1007/978-94-011-5884-8_26
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DOI: https://doi.org/10.1007/978-94-011-5884-8_26
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