Abstract
Simulations complement analytic modeling and lab experiments, following electron, ion and neutral motion in discharges used for processing materials, especially semiconductors. Simulations are shown of charged particle motion, fields, potentials, densities, and energies, etc., in the plasma volume and at surfaces. The PIC-MCC methods displayed come from first principles, fully nonlinear, run on fast workstations or PC’s, with many (non-invasive) diagnostics, with 1d, 2d, and 3d models, all with 3 velocity components. Examples are given, with experimental verification. Comparison is made between fluid and particle methods. The codes displayed are free.
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References
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© 1997 Springer Science+Business Media Dordrecht
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Birdsall, C.K. (1997). Particle in Cell Monte Carlo Collision Codes(PIC-MCC); Methods and Applications to Plasma Processing. In: Williams, P.F. (eds) Plasma Processing of Semiconductors. NATO ASI Series, vol 336. Springer, Dordrecht. https://doi.org/10.1007/978-94-011-5884-8_15
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DOI: https://doi.org/10.1007/978-94-011-5884-8_15
Publisher Name: Springer, Dordrecht
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