Abstract
C-axis oriented and disordered aluminum nitride layers have been deposited by RF, respectively DC magnetron reactive sputtering mode. The same deposition conditions were used for gas flow and pressure. The differences between the two growing modes are explained by the influence of ion bombardment upon the growing layers, which is stronger in the RF mode in comparison with the DC one, at the same deposition rate.
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References
Okano, H., Takhashi, Y., Tanaka, T., Shibata K. and Nakano, S. (1992) Preparation of c-Axis Oriented AIN Thin Films by Low Temperature Reactive Sputtering, Jpn. J. Appl. Phys. 31, 3446–3451.
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© 1997 Springer Science+Business Media Dordrecht
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Morosanu, C., Dumitru, V., Cimpoiasu, E., Nenu, C. (1997). Comparison Between DC and RF Magnetron Sputtered Aluminum Nitride Films. In: Prelas, M.A., Benedictus, A., Lin, LT.S., Popovici, G., Gielisse, P. (eds) Diamond Based Composites. NATO ASI Series, vol 38. Springer, Dordrecht. https://doi.org/10.1007/978-94-011-5592-2_9
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DOI: https://doi.org/10.1007/978-94-011-5592-2_9
Publisher Name: Springer, Dordrecht
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