Abstract
We have developed a novel plasma-assisted physical deposition process for the growth of cubic boron nitride films. Our approach recognizes the central role of kinetics in the formation of this metastable phase and utilizes high substrate temperatures, a low flux of boron, and energetic nitrogen ions from a compact ECR source. We have been able to reduce the ion-energy needed to form the cubic phase to substantially below 100 eV with substantial improvements in the film crystallinity and orientation and an associated reduction in the film stress. Using this method we have demonstrated the growth of cubic BN films on silicon to thicknesses in excess of 1.9 µm. In-situ RHEED measurements show that the deposition process is optimized in a narrow range ion energies (ΔE ~ 15 eV) controlled by a do substrate bias potential. The optimum substrate bias potential is inversely proportional to the nitrogen ion flux. Additional insight into the evolution of thin-film stress during growth is provided by polarized FTIR spectroscopy measurements which also shed light on the initial nucleation mechanism of the cubic phase.
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Taylor, C.A., Clarke, R. (1997). Growth Kinetics of Cubic Boron Nitride Films and Composites. In: Prelas, M.A., Benedictus, A., Lin, LT.S., Popovici, G., Gielisse, P. (eds) Diamond Based Composites. NATO ASI Series, vol 38. Springer, Dordrecht. https://doi.org/10.1007/978-94-011-5592-2_6
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