Diamond Based p-i-n Transistor

Abstract

Diamond based semiconductor structure with an active insulating zone is a very perspective component of diamond electronics. The work of such device is based on space charge limited current (SCLC) or electron-hole recombination and space charge limited double injection current in insulator. The main advantage of the structure is, first of all, a lower concentration of defects in the dielectric active zone than in doped one, that allows to receive high mobility of the carriers ∼n diamond, and second, in elimination of restrictions, connected with deep acceptor level of B in diamond. P-i-M and p-i-n diodes, p-i-p structures, p-i-p field effect transistor (FET) with a Schottky barrier gate and p-i-p FET with a SiO₂ gate insulator have been already developed and described [1–5]. Usage i-diamond as working area leads to the improvement of working parameters of active diamond devices. In p-i-p FET the holes are injected from p-diamond and transported by SCLC mechanism in the i-region. However currents of double injection significantly exceed SCLC [6]. One of the variants of high power insulated gate p-i-n transistor is described [7].