Abstract
The doping of diamond and diamond films with electrically active impurities can be accomplish during synthesis [1], or by ion implantation [2]. An alternate method of doping with impurities in diamond is transmutation doping. It is especially important for realization of a n-type in diamond, the creation of which is complicated. Recently an opportunity for Li doping of diamond films by means of the reaction 10B (n,α)7Li [3,4] was shown. Transmutational doping is connected to formation of defects, rendering significant influence to the electrical and optical characteristics of the diamond films. In this work paramagnetic defects in the doped 10B initial diamond films, irradiated by neutrons and subjected to subsequent thermal annealing have been studied.
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Varichenko, V.S. et al. (1997). ESR Study of Neutron Irradiated Doped Diamond Films. In: Prelas, M.A., Benedictus, A., Lin, LT.S., Popovici, G., Gielisse, P. (eds) Diamond Based Composites. NATO ASI Series, vol 38. Springer, Dordrecht. https://doi.org/10.1007/978-94-011-5592-2_27
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DOI: https://doi.org/10.1007/978-94-011-5592-2_27
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