Abstract
Photoluminescence of amorphous carbon has many intriguing properties, a number of which are similar to those of chalcogenide materials and amorphous silicon; however, the underlying processes are very different. In this article we discuss a variety of recent experiments on the photoluminescence properties of hydrogenated amorphous carbon. These experiments include examination of structural effect on the shape and energy distribution of luminescence spectra, the sample’s polarization memory with its dependence on emission energy and temperature, moreover the excitation-emission matrix in a wide energy range. Some aspects of photoluminescence decay kinetics and changes in PL properties caused by thermal and light treatment will also be covered. All of our results corroborate that luminescence originates from the excited state of localised π electrons; depending on the extent of π electron localization, they are candidates for non-radiative recombination as well.
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Koós, M., Pócsik, I. (1997). Photoluminescence in Hydrogenated Amorphous Carbon. In: Andriesh, A., Bertolotti, M. (eds) Physics and Applications of Non-Crystalline Semiconductors in Optoelectronics. NATO ASI Series, vol 36. Springer, Dordrecht. https://doi.org/10.1007/978-94-011-5496-3_27
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DOI: https://doi.org/10.1007/978-94-011-5496-3_27
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