Abstract
We have performed detailed measurements of the charge transfer efficiency (CTE) in a thinned, backside-illuminated imaging CCD. The device had been damaged in three separate sections by proton radiation typical of that which a CCD would receive in space-borne experiments, nuclear imaging or particle detection. We examined CTE as a function of temperature, clock rate and radiation dose.
The dominant factor affecting the CTE in radiation-damaged CCDs is seen to be trapping by bulk states. We present a simple physical model for trapping as a function of transfer rate, trap concentration and temperature. We have made calculations using this model and arrived at predictions that closely match the measured results.
Access this chapter
Tax calculation will be finalised at checkout
Purchases are for personal use only
Preview
Unable to display preview. Download preview PDF.
References
R. Murowinski, M.J. Deen, T. Hardy, “Charge transfer efficiency in low temperature charge coupled devices”, Proceedings of the Symposium on Low Temperature Electronics and High Temperature Superconductivity, Proceedings Vol. 95-9, C. Claeys, S. Raider, R. Kirschman and W. Brown, Editors, The Electrochemical Society Press, New Jersey, pp. 369–382 (1995).
R. Murowinski, G. Linzhuang, M.J. Deen, “Effects of space radiation damage and temperature on CCD noise for the Lyman FUSE mission”, in Photonics for Space Environments, E. Taylor, Editor, Proc. SPIE 1953, pp. 71–81 (1993).
A. Mohsen and M. Tompsett, “The effects of bulk traps on the performance of bulk channel charge-coupled devices”, IEEE Trans. on Electron Devices Vol. ED-21 (11), pp. 701–712 (1974).
I. Zayer, I. Chapman, D. Duncan, G. Kelly, K. Mitchell, “Results from proton damage tests on the Michelson Doppler Imager CCD for SOHO”, Proceedings Of the SPIE Vol. 1900, pp. 97–107 (1993).
I. H. Hopkins, G. Hopkinson and B. Johlander, “Proton-induced charge transfer degradation in CCDs for near-room temperature applications”, IEEE Trans. On Nuclear Science Vol. NS-41 (6), pp. 1984–1991 (1994).
V. A. J. Van Lint, “The physics of radiation damage in particle detectors”, Nuclear Instr. and Meth. Vol. A253, pp. 453–458 (1987).
J. Janesick, G. Soli, T. Elliot and S. Collins, “The effects of proton damage on charge-coupled devices”, Proceedings of the SPIE Vol. 1447, pp. 87–108 (1991).
M. S. Robbins, T. Roy and S. Watts, “Degradation of the charge transfer efficiency of a buried channel charge coupled device due to radiation damage by a beta source”, RADECS 91, IEEE Proceedings, pp. 327–332 (1992).
A. D. Holland, “The effect of bulk traps in proton irradiated EEV CCDs”, Nuclear Instr. and Meth. Vol. A326, pp. 335–343 (1993).
C. Dale, P. Marshall, B. Cummings, L. Shamey and A. Holland, “Displacementdamage effects in mixed particle environments for shielded spacecraft CCDs”, IEEE Trans. on Nuclear Science Vol. NS-40 (6), pp. 1628–1637 (1993).
N. S. Saks, “Investigation of bulk electron traps created by fast neutron irradiation in a buried n-channel CCD”, IEEE Trans. on Nuclear Science Vol. NS-24 (6), pp. 2153–2157 (1977).
Z. Li, H. Kraner, E. Verbitskaya, V. Eremin, A. Ivanov, M. Rattaggi, P. Rancoita, F. Rubinelli, S. Fonash, C. Dale and P. Marshall, “Investigation of the oxygen-vacancy (A-center) defect complex profile in neutron irradiated high resistivity silicon junction particle detectors”, IEEE Trans. on Nuclear Science Vol. NS-39 (6), pp. 1730–1738 (1992).
E. K. Banghart, J. Levine, E. Trabka, E. Nelson and B. Burkey, “A model for charge transfer in buried channel charge-coupled devices at low temperature”, IEEE Trans. on Electron Devices Vol. ED-38 (3), pp. 1162–1174 (1991).
Ch.-K. Kim, in Charge-coupled Devices and Systems, M.J. Howes and D.V. Morgan, Editors, Wiley-Interscience, New York, p 57 (1979).
S.M. Sze, Physics of Semiconductor Devices, Wiley-Intersciences, New York, p 261 (1981).
R. Murowinski, G. Linzhuang, and M.J. Deen, “Effects of space radiation damage and temperature on the noise in CCDs and LDD MOS transistors”, IEEE Trans. on Nuclear Science Vol. NS-40 (3), pp. 288–294 (1993).
Author information
Authors and Affiliations
Editor information
Editors and Affiliations
Rights and permissions
Copyright information
© 1998 Springer Science+Business Media Dordrecht
About this paper
Cite this paper
Hardy, T., Deen, M.J., Murowinski, R. (1998). Charge Transfer Efficiency in Proton Damaged CCDs. In: Beletic, J.W., Amico, P. (eds) Optical Detectors for Astronomy. Astrophysics and Space Science Library, vol 228. Springer, Dordrecht. https://doi.org/10.1007/978-94-011-5262-4_34
Download citation
DOI: https://doi.org/10.1007/978-94-011-5262-4_34
Publisher Name: Springer, Dordrecht
Print ISBN: 978-94-010-6214-5
Online ISBN: 978-94-011-5262-4
eBook Packages: Springer Book Archive