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Production of metallic patterns with the help of highresolution inorganic resists

  • Chapter
Microelectronic Interconnections and Assembly

Part of the book series: NATO ASI Series ((ASHT,volume 54))

Abstract

Properties of chalcogenide inorganic resists and their applications, in particular in microelectronics, are considered. The development of microelectronics suppose the utilization of technologies providing elements sizes with submicron sizes and less. Important place in the microlithography processes have lightsensitive media to which rigid demands are applied, that are conditioned by the necessity of the high quality of microrelief patterns. Chalcogenide inorganic resists in recent time were succesfully applied for various spheres of application, including microlithography.

In present work the peculiarities of physical, chemical processes that proceed in such resists under image formation are considered. Among them: the factors that are influencing the lightsensitive properties of inorganic resists, including the influence of inorganic resist formation condition, dependence from the parameters of layers, that are forming the inorganic resist, spectral and temperature dependencies of photostimulated interaction, properties of products of photostimulated interaction, including their chemical, optical, electrical properties. The results of the investigations of image formation in such systems, mechanisms of photostimulated interaction are discussed, as well as technologies of inorganic resist production and design forms of their realization. Results of their application in microlithography are presented.

The main resist parameters enable them to be well inserted into the modern production technological lines. They showed very high resolution capability spatial frequency under HOE production - up to 4000 lines per mm, 0.2 μm lines under direct laser recording, nanolithography possibilities were shown, optical lithography: element sizes (layers of various metals:Cu,Cr,Mo,etc.) 0.4–0.5 μm as in positive,as well in negative lithography.The wide range of possible chalcogenide composition, and forms of realization, enables choosing the proper sensitivity on the given wavelength, if necessary. Sensitivity values ordinally are within 1–10 cm2/J, but this values can be increased under the direct laser recording (up to 300 cm2/J), under the temperature increase, different design and scheme realization. Such media are also sensitive to electron beams (10-3 – 10-4 C/cm2) and ion beams. Contrast coefficient values are within 0.5– 10. Such media can be prepared with the help of vacuum evaporation or deposition from the solution. Postexposure treatment can be wet or dry.

As seen from this data on the resolution capability values, spectral sensitivity range and on range of contrast values the inorganic resists satisfy the demands applied at present time. The additional advantage of this resists that they are sufficiently higher than organic resists in mechanical and thermal strengths, and also in the absence of shrinkage under the treatment.

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  1. Institute of Semiconductor Physics, National Academy of Sciences, Ukraine 45 Prospect Nauki, Kiev, 252650, Ukraine

    Alexander V. Stronski

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  1. Semiconductor Electronics Division, National Institute of Standards and Technology, Gaithersburg, Maryland, USA

    George Harman

  2. Department of Electrotechnology, Czech Technical University in Prague, Prague, Czech Republic

    Pavel Mach

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Stronski, A.V. (1998). Production of metallic patterns with the help of highresolution inorganic resists. In: Harman, G., Mach, P. (eds) Microelectronic Interconnections and Assembly. NATO ASI Series, vol 54. Springer, Dordrecht. https://doi.org/10.1007/978-94-011-5135-1_31

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  • DOI: https://doi.org/10.1007/978-94-011-5135-1_31

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