Abstract
A novel passivation mechanism for silicon etching in a TMAH solution is presented. This technique is based on a Au/Si/TMAH galvanic cell and does not require external contacts to the wafer or a wafer holder. In this paper the theory is explained. Furthermore, we demonstrate how the etch-stop technique is used for fabrication of n-type epi membranes.
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© 1998 Springer Science+Business Media Dordrecht
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Ashruf, C.M.A., Oemar, E.L., French, P.J., Sarro, P.M., Bressers, P.M.M.C., Kelly, J.J. (1998). Membrane Fabrication with Galvanic Etch-Stop. In: van den Berg, A., Bergveld, P. (eds) Sensor Technology in the Netherlands: State of the Art. Springer, Dordrecht. https://doi.org/10.1007/978-94-011-5010-1_21
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DOI: https://doi.org/10.1007/978-94-011-5010-1_21
Publisher Name: Springer, Dordrecht
Print ISBN: 978-94-010-6103-2
Online ISBN: 978-94-011-5010-1
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