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Many-Body Effects in the Ultrafast Population Transfer in P-Doped Semiconductor Quantum Wells

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Coherent Control in Atoms, Molecules, and Semiconductors
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Abstract

The influence of many-body effects due to the Coulomb interaction between charge carriers in semiconductors on the light-induced adiabatic population transfer is investigated. The population transfer under consideration involves heavy-hole (hh) and light-hole (lh) bands in p-doped semiconductor quantum wells. The investigation is a theoretical analysis and numerical evaluation of appropriate generalized multi-band semiconductor Bloch equations. Dynamic energy renormalizations due to Coulomb exchange interactions as well as quasi-thermalization of charge carriers is taken into account.

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© 1999 Springer Science+Business Media Dordrecht

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Binder, R., Lindberg, M. (1999). Many-Body Effects in the Ultrafast Population Transfer in P-Doped Semiconductor Quantum Wells. In: Pötz, W., Schroeder, W.A. (eds) Coherent Control in Atoms, Molecules, and Semiconductors. Springer, Dordrecht. https://doi.org/10.1007/978-94-011-4552-7_9

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  • DOI: https://doi.org/10.1007/978-94-011-4552-7_9

  • Publisher Name: Springer, Dordrecht

  • Print ISBN: 978-94-010-5932-9

  • Online ISBN: 978-94-011-4552-7

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