Abstract
Deuterium retention, solubility and out-diffusion have been studied in silicon doped carbon films produced by physical vapor deposition. The deuterium concentration profiles were measured by the time-of-flight elastic recoil detection analysis technique and secondary ion mass spectrometry. The D retention and solubility were measured in D implanted carbon samples. The out-diffusion of D was investigated in D co-deposited samples. The solubility of D was shown to increase as a function of Si concentration in the co-deposited samples while in the implanted samples no dependence of the Si content was observed. It was proposed that annealing behavior of deuterium has a trapping-like character.
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© 2000 Springer Science+Business Media Dordrecht
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Vainonen-Ahlgren, E. et al. (2000). Deuterium Retention in si Doped Carbon Films. In: Wu, C.H. (eds) Hydrogen Recycling at Plasma Facing Materials. NATO Science Series, vol 1. Springer, Dordrecht. https://doi.org/10.1007/978-94-011-4331-8_31
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DOI: https://doi.org/10.1007/978-94-011-4331-8_31
Publisher Name: Springer, Dordrecht
Print ISBN: 978-0-7923-6630-0
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