Abstract
Thin-film SOI MOSFETs are known to have superior device properties for hightemperature applications, namely, latch-up free operation, smaller threshold voltage shifts, and much lower off-state leakage currents [1–3]. The aim of this work is a detailed characterization of the high-temperature off-state and subthreshold characteristics of SOI MOSFETs using simulations and measurements. It is shown that at high temperatures (200–300°C) both subthreshold and off-state characteristics of enhancement-mode devices can be explained in terms of diffusion models adjusted for high-temperature conditions.
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© 2000 Springer Science+Business Media Dordrecht
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Rudenko, T.E., Lysenko, V.S., Kilchytska, V.I., Rudenko, A.N. (2000). A Comprehensive Analysis of the High-Temperature Off-State and Subthreshold Characteristics of SOI Mosfets. In: Hemment, P.L.F., Lysenko, V.S., Nazarov, A.N. (eds) Perspectives, Science and Technologies for Novel Silicon on Insulator Devices. NATO Science Series, vol 73. Springer, Dordrecht. https://doi.org/10.1007/978-94-011-4261-8_27
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DOI: https://doi.org/10.1007/978-94-011-4261-8_27
Publisher Name: Springer, Dordrecht
Print ISBN: 978-0-7923-6117-6
Online ISBN: 978-94-011-4261-8
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