Abstract
The wafer bonding technique was originally developed to produce SOI substrates, in which case hydrophilic oxide-to-oxide bonding is involved. Later on it became possible to bond other types of materials including bare (hydrogen terminated) silicon, compound semiconductors and nitride materials. Now wafer bonding is used to produce not only SOI substrates, but high-voltage silicon devices, optical devices, and micro-electromechanical systems. In this paper a review of the various processes for microfabrication of micro-electro-mechanical systems (MEMS) devices will reveal that silicon direct wafer (SDB) bonding combined with techniques such as bulk and surface micromachining, has added advantages for three-dimensional applications. We will report results showing that SDB can be used for the construction of complex structures. Furthermore, we will discuss the advantages of nitride bonding and present examples of practical applications utilizing this technique.
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References
E. Klaasen, K. Petersen, J.M. Noworolski, J. Logan, N.I. Maluf, J. Brown, S. Storment, W. McCulley and G.T.A. Kovacs (1996) Silicon fusion bonding and deep reactive ion etching: a new technology for microstructures, Sensors and Actuators A, 52, 132–139
Y. Lindén, L. Tenerz, J. Tirén and B. Höik (1989) Fabrication of three-dimensional structures by means of doping-selective etching (DSE), Sensors and Actuators A, 16, 83–88
P.W. Green, R.R.A. Syms and E.M. Yeatman (1995) Demonstration of threedimensional microstructure self-assembly, J. Microelectromechanical Systems, 4-4, 170–176
Y.B. Gianchandani, and K. Najafi (1992) A bulk silicon dissolved wafer process for micromechanical devices, J. Microelectromechanical Systems, 1-2, 77–85
H. Miyajima and M. Mehregany (1995) High-aspect-ratio photolithography for MEMS applications, J. Microelectromechanical Systems, 4-4, 220–229
U. Gösele, J. Haisma, M. Schmidt and T. Abe, eds. (1992) First Int. Symp. Semiconductor Wafer Bonding: Science, Technology and Applications, Electrochem. Soc. Proc. 92-7
H. Baumgart, Ch. Hunt, M. Schmidt and T. Abe, eds. (1993) Second Int. Symp. Semiconductor Wafer Bonding: Science, Technology and Applications, Electrochem. Soc. Proc. 93-29
H. Baumgart, Ch. Hunt, S. Iyer, U. Gösele and T. Abe, eds. (1995) Third Int. Symp. Semiconductor Wafer Bonding: Science, Technology and Applications, Electrochem. Soc. Proc. 95-7
U. Gösele, H. Baumgart, Ch. Hunt, T. Abe, eds. (1997) Fourth Int. Symp. Semiconductor Wafer Bonding: Science, Technology and Applications, Electrochem. Soc. Proc. 98-36
U. Gösele, H. Stenzel, M. Reiche, T. Martini, H. Steinkirchner and Q.Y. Tong (1996) History and future of semiconductor wafer bonding, Solid State Phenomena 47/48, 33–44
F.S. d’Aragona and L. Ristic (1994) In Sensor Technology and Devices, ed. L Ristic, Boston: Artech House, 157–201.
J. Haisma, B.A.C.M. Spierings, U.K.P. Biermann and A.A. van Gorkum (1994) Diversity and feasibility of direct bonding: a survey of a dedicated optical technology, Appl. Optics 33, 1154–1169
W.P. Maszara (1991) Silicon-on-insulator by wafer bonding: a review, J. Electrochem. Soc. 138, 341–347
Special Issue on Direct Bonding (1995) Philips Journal of Research 49, 1–182
J.B. Lasky, S.R. Stiffler, F.R. White, F.R. Abernathery (1985) Silicon-on-Insulator (SOI) by Bonding and Etch-Back, IEDM Tech. Dig., 684–687
G. Cha, W.S. Yang, D. Feijo, W.J. Taylor, R. Stengl, and U. Gösele (1992) Electrochem. Soc. Proc. 92-7, 249
R. Stengl, T. Tan, and U. Gösele (1989) A Model for the Silicon Wafer Bonding Process, Jpn. J. of Appl. Physics, 28-10, 1735–1741
W.P. Maszara, G. Goetz, A. Cavigilia, and J.B. McKitterick (1988) Bonding of Silicon Wafers for Silicon-on-Insulator, J. Appl. Phys., 64-10, p. 4943–4950
Q.Y. Tong, L.J. Kim, T.H. Lee and U. Gösele (1998) Low-vacuum wafer bonding, Electrochem Solid-State Letters 1, 52–53
V.L. Spiering, J.W. Berenschot, M. Elwenspoek and J.H.J. Fluitman (1995) Sacrificial wafer bonding for planarization after very deep etching, J. Microelectromechanical Systems, 4–3, 151–157
T. Fujii, Y. Gotoh and S. Kuroyanagi (1992) Fabrication of microdiaphragm pressure sensor utilizing micromachining, Sensors and Actuators A, 34, 217–224
Y. Matsumoto, M. Iwakiri, H. Tanaka, M. Ishida and T. Nakamura (1996) A capacitive accelerometer using SDB-SOI structure, Sensors and Actuators A, 53, 267–272
W. Maszara,, G. Goetz, A. Caviglia and J.B. McKitterick (1988) Bonding of silicon wafers for Silicon-on-Insulator, J. Appl. Phys., 64-10, 4943–4950
C.A. Desmond, J.J. Olup, P. Abolghasem, J. Folta and G. Jernigan (1997) Analysis of nitride bonding, Electrochemical Society Proceedings, 98-36, 171–178
D.W. Burns, H. Guckel, “Thin films for micromechanical sensors”, J. Vac. Sci. Tech. A, 8 (4), p. 3606, July 1990
S. Sugiyama, I. Igarashi, “Micromachining and Its Application for Pressure Sensors”, Extended Abstracts of the 21st Conference on Solid State Devices and Materials, p. 189, Tokyo, 1989
R. Schellin, G. Hess, “A silicon subminiature microphone based on piezoresistive polysilicon strain gauges”, Sensors and Actuators A, 32, p. 555, 1992
P. Murphy et al., “Subminiature Silicon Integrated Electret Capacitor Microphone”, IEEE Trans. on Electrical Insulation, 24 (3), p. 495, June 1989
G. Blasquez et al., “Capabilities and Limits of Silicon Pressure Sensors”, Sensors and Actuators A, 17, p. 387, 1989
C.A. Desmond, R. Mlcak and D. Franz (1995) Fabrication of a high-sensitivity pressure sensor with nitride membranes and single-crystal piezoresistors using wafer bond and etch back, Electrochemical Society Proceedings 98-36, 509–517
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Colinge, C.A. (2000). Wafer Bonding for Micro-ElectroMechanical Systems (MEMS). In: Hemment, P.L.F., Lysenko, V.S., Nazarov, A.N. (eds) Perspectives, Science and Technologies for Novel Silicon on Insulator Devices. NATO Science Series, vol 73. Springer, Dordrecht. https://doi.org/10.1007/978-94-011-4261-8_26
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DOI: https://doi.org/10.1007/978-94-011-4261-8_26
Publisher Name: Springer, Dordrecht
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