Abstract
This paper provides a modeling technique for coplanar transmission lines implemented on SOI technologies with substrates of various conductivity values especially dedicated to RF design. The model is verified by S-parameter measurements from 45 MHz up to 10 GHz, which clearly proves that such SOI structures can be accurately modelled using a standard analytical approach.
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© 2000 Springer Science+Business Media Dordrecht
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Lescot, J., Rozeau, O., Jomaah, J., Boussey, J., Ndagijimana, F. (2000). Experimental Investigation and Modeling of Coplanar Transmission Lines on SOI Technologies for RF Applications. In: Hemment, P.L.F., Lysenko, V.S., Nazarov, A.N. (eds) Perspectives, Science and Technologies for Novel Silicon on Insulator Devices. NATO Science Series, vol 73. Springer, Dordrecht. https://doi.org/10.1007/978-94-011-4261-8_22
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DOI: https://doi.org/10.1007/978-94-011-4261-8_22
Publisher Name: Springer, Dordrecht
Print ISBN: 978-0-7923-6117-6
Online ISBN: 978-94-011-4261-8
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