Abstract
The multiangle ellipsometry is employed to investigate the composition and geometrical structure of SOI materials synthesized by a combined implantation of oxygen and carbon ions. The ellipsometry data are interpreted within the scope of a multilayer model based on both the numerical simulations and the Auger electron spectroscopy data. The optical constants and layer thicknesses in the model are determined by solving the ellipsometry inverse problem with the numerical algorithm developed earlier using Tikhonov’s regularization technique. In the framework of the effective medium theory the space factor for the SiO2 phase filling the effective dielectric layer is estimated for samples prepared differently.
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References
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Azabashta, L., Zabashta, O.I., Storizhko, V.E., Bortchagovsky, E.G., Romanyuk, B.N., Melnik, V.P. (2000). Investigation of the Structural and Chemical Properties of SOI Materials by Ellipsometry. In: Hemment, P.L.F., Lysenko, V.S., Nazarov, A.N. (eds) Perspectives, Science and Technologies for Novel Silicon on Insulator Devices. NATO Science Series, vol 73. Springer, Dordrecht. https://doi.org/10.1007/978-94-011-4261-8_21
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DOI: https://doi.org/10.1007/978-94-011-4261-8_21
Publisher Name: Springer, Dordrecht
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