Abstract
We have developed new electrolyte solutions for high voltage electrochemical oxidation of porous silicon and have demonstrated their utility by fabricating porous silicon structures containing a buried oxide layer. These structures have high breakdown voltages, over 300V, and are suitable for epitaxial growth of device grade silicon layers. These new structures provide the basis for a versatile SOI technology for the integration high speed and low power devices with high voltage power devices within a monolithic substrate. This paper complements technical details of a novel SOI technology described in the preceding paper in this volume.
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Romanov, S.I., Dvurechenskii, A.V., Kirienko, V.V., Grötzschel, R., Gutakovskii, A., Sokolov, L.V., and Lamin, M.A. (1999) Homoepitaxy on porous silicon with a buried oxide layer: full-wafer scale SOI, in this issue the preceding paper.
Romanov, S.I. Russian Federation Patent application 97103165 (1997).
Romanov, S.I. Russian Federation Patent application 97103424 (1997).
Hunt, C.E., Baumgart, H., Iyer, S.S., Abe, T., and Gosele, U. (eds.) (1995) Semiconductor Wafer Bonding: Physics and Applications III, Vol. 95-7, The Electrochemical Society, Inc., Pennington.
Nakagawa, A., H. Funaki, H., and I. Omura, I. (1995) High voltage SOI technology (invited paper), in C.E. Hunt, H. Baumgart, S.S. Iyer, T. Abe, and U. Gosele (eds.), Semiconductor Wafer Bonding: Physics and Applications III, Vol. 95-7, The Electrochemical Society, Inc., Pennington, pp. 411–419.
Karanovich, A.A., Romanov, S.I., Kirienko, V.V., Myasnikov, A.M., and Obodnikov, V.I. (1995) A secondary ion mass spectrometry study of p+ porous silicon, J. Phys. D: Appl. Phys. 28, 2345–2348.
Canham, L.T., Houlton, M.R., Leong, W.Y., Pickering, C., and Keen, J.M. (1991) Atmospheric impregnation of porous silicon at room temperature, J. Appl. Phys. 70, 422–431.
Behrisch, R., Grötzschel, R., Hentschel, E., and Assmann, W. (1992) HIERD analysis of the low-Z deposits on probes from the vessel walls of fusion experiments, Nucl. Instr. and Meth. B68, 245–248.
Grötzschel, R., Hentschel, E., Klabes, R., Kreiβig, U., Neelmeijer, C., Assmann, W., and Behrisch, R. (1992) Elemental analysis of thin layers by elastic heavy ion scattering, in E. Wieser (editor). Institute for Ion Beam Physics and Material Research, Research Programme 1992, Scientific Report 1991, FZR 92-06, April 1992 Forschugszentrum, Rossendorf e.V., p.53.
Oules, C., Halimaoui, A., Regolini, J.L., Perio, A., and Bomchil, G. (1992) Silicon on Insulator Structures Obtained by Epitaxial Growth of Silicon over Porous Silicon, J. Electrochem. Soc. 139, 3595–3599.
Grosman, A., Ortega, C., Wang, Y.S., and Gandais, M. (1997) Morphology and Structure of p-type Porous Silicon by Transmission Electron Microscopy, in M.O. Manasreh (series editor), G. Amato, C. Delerue, and H.-J. von Bardeleben (eds.), OPTOELECTRONIC PROPERTIES of SEMICONDUCTORS and SUPERLATTICES, Volume 5: STRUCTURAL AND OPTICAL PROPERTIES OF POROUS SILICON NANOSTRUCTURES, Gordon and Breach Science Publishers, pp. 317–331.
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Romanov, S.I. et al. (2000). Characterization of Porous Silicon Layers Containing A Buried Oxide Layer. In: Hemment, P.L.F., Lysenko, V.S., Nazarov, A.N. (eds) Perspectives, Science and Technologies for Novel Silicon on Insulator Devices. NATO Science Series, vol 73. Springer, Dordrecht. https://doi.org/10.1007/978-94-011-4261-8_18
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DOI: https://doi.org/10.1007/978-94-011-4261-8_18
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