Abstract
β-SiC on SiO2 multilayer structures have been fabricated by ion implantation into Si substrates and thermal bonding. This process involves three steps: i) multiple energy C+ implants into Si, to obtain a broad buried β-SiC layer, ii) selective oxidation of the top Si layer, and iii) bonding and etch-back of Si. These are processes compatible with Si processing technology, and permit high crystalline quality β-SiC films on SiO2 to be formed without using expensive bulk SiC or Silicon-On-Insulator wafers. The structures have been characterised after the different process steps mainly by Fourier Transform Infrared Spectroscopy, X-Ray Photoelectron Spectroscopy, Secondary Ion Mass Spectroscopy and Atomic Force Microscopy. The analysis of samples processed after the different steps has allowed the key parameters for fabricating high quality structures for electronic devices and sensors applications to be defined.
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Serre, C. et al. (2000). β-SiC on SiO2 Formed by ION Implantation and Bonding for Micromechanics Applications. In: Hemment, P.L.F., Lysenko, V.S., Nazarov, A.N. (eds) Perspectives, Science and Technologies for Novel Silicon on Insulator Devices. NATO Science Series, vol 73. Springer, Dordrecht. https://doi.org/10.1007/978-94-011-4261-8_11
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DOI: https://doi.org/10.1007/978-94-011-4261-8_11
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