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Low-Temperature Processing of Crystalline Si Films on Glass for Electronic Applications

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Perspectives, Science and Technologies for Novel Silicon on Insulator Devices

Part of the book series: NATO Science Series ((ASHT,volume 73))

Abstract

The present paper gives an overview of the material properties and the technology of the low-temperature preparation and modification of crystalline Si films on glass. Electronic properties of Si films strongly depend on the film structure, which thus determines possible areas of devices applications. In detail, we discuss i) high-throughput pulsed laser crystallization using a solid state laser that enables the formation of Si films with elongated grains having a length of several ten μm, ii) low-temperature epitaxy at temperatures around 600°C with a rate up to 0.5 μm/min using ion assisted deposition, and iii) the formation of quasi-monocrystalline Si films via crystallization of porous Si. This innovative thin film transfer technology permits reuse of Si wafers and produces films with a thickness-dependent hole mobility of up to 78 cm2/Vs and effective internal light trapping.

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Author information

Authors and Affiliations

  1. Institut für Physikalische Elektronik, Universität Stuttgart, Pfaffenwaldring 47, D-70569, Stuttgart, Germany

    R. B. Bergmann, T. J. Rinke, L. Oberbeck & R. Dassow

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  1. R. B. Bergmann
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  2. T. J. Rinke
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  3. L. Oberbeck
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  4. R. Dassow
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Editors and Affiliations

  1. University of Surrey, Guildford, Surrey, UK

    Peter L. F. Hemment

  2. Institute of Semiconductor Physics, Kyiv, Ukraine

    V. S. Lysenko  & A. N. Nazarov  & 

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© 2000 Springer Science+Business Media Dordrecht

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Bergmann, R.B., Rinke, T.J., Oberbeck, L., Dassow, R. (2000). Low-Temperature Processing of Crystalline Si Films on Glass for Electronic Applications. In: Hemment, P.L.F., Lysenko, V.S., Nazarov, A.N. (eds) Perspectives, Science and Technologies for Novel Silicon on Insulator Devices. NATO Science Series, vol 73. Springer, Dordrecht. https://doi.org/10.1007/978-94-011-4261-8_10

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  • DOI: https://doi.org/10.1007/978-94-011-4261-8_10

  • Publisher Name: Springer, Dordrecht

  • Print ISBN: 978-0-7923-6117-6

  • Online ISBN: 978-94-011-4261-8

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