Abstract
Research on magnetic semiconductors has for the last two decades been largely focused on II-VI semiconductor alloys containing Mn. These materials (e.g. HgMnTe, ZnMnSe) have served to firmly establish the potential role of electron spin in semiconductor physics. Giant Faraday rotation in CdMnTe, enormously large negative magnetoresistance in p-type HgMnTe [1] and - in the case of multilayers - the achievement of spatial segregation of electrons with opposite spin in so-called “spin superlattices” [2,3] are examples of the many new and exciting effects which are made possible by these materials. Although the phenomena just illustrated are of a magnitude that readily suggests a number of spin-based device applications (such as optical isolators [4]), the realisation of such devices has been very limited because all the effects mentioned above are determined by the magnetisation of the magnetic sublattice, which rapidly decreases as one approaches room temperature. Increasing the concentration of magnetic ions to enhance these effects in II-VI-Mn alloys is ineffective (and in fact counterproductive), because the dominant Mn-Mn interaction in these materials is antiferromagnetic, limiting the magnetisation - and thus also the spin-dependent effects just described.
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Furdyna, J.K., Schiffer, P., Sasaki, Y., Potashnik, S.J., Liu, X.Y. (2000). Ferromagnetic Semiconductors and Their Nanostructures: New Opportunities and Challenges. In: Sadowski, M.L., Potemski, M., Grynberg, M. (eds) Optical Properties of Semiconductor Nanostructures. NATO Science Series, vol 81. Springer, Dordrecht. https://doi.org/10.1007/978-94-011-4158-1_23
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