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Recombination Dynamics of Negatively Charged Excitons in Gated GaAs Quantum Wells

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Optical Properties of Semiconductor Nanostructures

Part of the book series: NATO Science Series ((ASHT,volume 81))

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Abstract

We study the dependence of the photoluminescence decay of the negatively charged exciton on the electron concentration for different excitation energies. The radiative lifetime of the trion, directly measured when exciting the trion resonantly, is found to be constant for the studied concentration range from about 3 x 1010 cm-2 upwards.

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© 2000 Springer Science+Business Media Dordrecht

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Ciulin, V. et al. (2000). Recombination Dynamics of Negatively Charged Excitons in Gated GaAs Quantum Wells. In: Sadowski, M.L., Potemski, M., Grynberg, M. (eds) Optical Properties of Semiconductor Nanostructures. NATO Science Series, vol 81. Springer, Dordrecht. https://doi.org/10.1007/978-94-011-4158-1_17

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  • DOI: https://doi.org/10.1007/978-94-011-4158-1_17

  • Publisher Name: Springer, Dordrecht

  • Print ISBN: 978-0-7923-6317-0

  • Online ISBN: 978-94-011-4158-1

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