Skip to main content
SpringerLink
Log in

Grain Boundaries in High-Purity Silicon Carbide

  • Chapter
Book cover Silicon Carbide Ceramics—1

  • 567 Accesses

Abstract

Grain boundaries in high-purity silicon carbide bicrystals produced by sublimation-deposition at 2800 K were examined by high-resolution transmission electron microscope (HRTEM). Two asymmetric tilt boundaries with a rotation of 70–5° about [1100], Le. a 6H polytype boundary parallel to (0001) of one of the crystals and a 6H/15R hetero-polytype boundary were observed. Both boundaries were without an amorphous layer. The periodic arrangement of atoms in the boundaries was analyzed using the geometrical coincidence-site lattice model, while the actual atomic structure of the boundary was modeled from the HRTEM images.

This is a preview of subscription content, log in via an institution to check access.

Access this chapter

Log in via an institution
Chapter
USD 29.95
Price excludes VAT (USA)
  • Available as PDF
  • Read on any device
  • Instant download
  • Own it forever
eBook
USD 74.99
Price excludes VAT (USA)
  • Available as PDF
  • Read on any device
  • Instant download
  • Own it forever

Tax calculation will be finalised at checkout

Purchases are for personal use only

Institutional subscriptions

Preview

Unable to display preview. Download preview PDF.

Unable to display preview. Download preview PDF.

References

  1. Ishida, Y., Ichinose, H. & Inomata, Y., Structural analysis by high resolution electron microscopy. Report on researches of the surface and interface controlling technique for the development of functional high tech materials. Science and Technology Agency, 1986. 10, pp. 227–237.

    Google Scholar 

  2. Ichinose, H., Inomata, Y. & Ishida, Y., HRTEM analysis of ordered grain boundaries in high purity alpha-SiC. Proceedings of Ceramic Microstructure’s 86: Role of Interfaces (to be published by Plenum).

    Google Scholar 

  3. Bourret, A. & Bacman, J. J., Defects structure in the 2 = 27, 11 and (21T) 2 = 3 symmetrical grain boundaries in germanium. Proceedings to JIMIS-4, Trans JIM 27 Supplement 125–134 (1986).

    Google Scholar 

  4. Inomata, Y., Inoue, Z. & Uemura, Y., Yogyo-Kyokai-Shi, 70 (1982), 87–94.

    Google Scholar 

Download references

Authors
  1. Yoichi Ishida
    View author publications

    You can also search for this author in PubMed Google Scholar

  2. Hideki Ichinose
    View author publications

    You can also search for this author in PubMed Google Scholar

  3. Yoshizo Inomata
    View author publications

    You can also search for this author in PubMed Google Scholar

Editor information

Editors and Affiliations

  1. The Nishi Tokyo University, Japan

    Shigeyuki Sömiya (Professor and Professor Emeritus) (Professor and Professor Emeritus)

  2. Tokyo Institute of Technology, Japan

    Shigeyuki Sömiya (Professor and Professor Emeritus) (Professor and Professor Emeritus)

  3. National Institute for Research in Inorganic Materials, Tsukuba, Japan

    Yoshizo Inomata

Rights and permissions

Reprints and permissions

Copyright information

© 1991 Elsevier Science Publishers Ltd

About this chapter

Cite this chapter

Ishida, Y., Ichinose, H., Inomata, Y. (1991). Grain Boundaries in High-Purity Silicon Carbide. In: Sömiya, S., Inomata, Y. (eds) Silicon Carbide Ceramics—1. Springer, Dordrecht. https://doi.org/10.1007/978-94-011-3842-0_8

Download citation

  • DOI: https://doi.org/10.1007/978-94-011-3842-0_8

  • Publisher Name: Springer, Dordrecht

  • Print ISBN: 978-1-85166-560-0

  • Online ISBN: 978-94-011-3842-0

  • eBook Packages: Springer Book Archive

Publish with us

Policies and ethics

Search

Navigation