Abstract
The pressureless sintering of ultrafine SiC powder (average particle size: 0·01–0·12 µm) obtained by vapor phase reaction method was investigated with an emphasis on the effects of powder properties and sintering aids.
The ultrafine SiC powder showed a remarkable densification in the presence of both carbon and boron as sintering aids, but the sintering aids were indispensable to densification. The homogeneous addition of sintering aids was important to enhance the effects thereof. The deposition of an adequate amount of free carbon and boron from the vapor phase was available on the preparation of SiC powder, and the resulting SiC powder showed very high sinterability due to the widespread dispersion of sintering aids on the surface of SiC particles. When the atomic ratio (C-0)/Si was near 1·0, SiC powder had high sinterability because free carbon accelerated SiC sintering by removal of the surface oxide layer of SiC particles while excess carbon retarded sintering. The effect of the particle size of the starting powder was significant: a particle size below 0·05 µm was required for densification above 95% of theoretical by 2050°C sintering. The binary mixing of SiC powders with different particle sizes improved sinterability, being especially effective in promoting the densification of coarse powders.
In conclusion, the conditions for SiC powder with good sinterability are the reduction of particle size, the control of chemical composition, and the homogeneous addition of sintering aids.
This is a preview of subscription content, log in via an institution.
Buying options
Tax calculation will be finalised at checkout
Purchases are for personal use only
Learn about institutional subscriptionsPreview
Unable to display preview. Download preview PDF.
References
Nadeau, J. S., Very high pressure hot pressing of silicon carbide. Am. Ceram. Soc. Bull., 52(2) (1973), 170–174.
Prochazka, S., Sintering of silicon carbide. In Ceramics for High Performance Applications, ed. J. J. Burke, A. E. Gorum & R. N. Katz. Brook Hill Publishing Co., Chestnut Hill, 1974, pp. 239–252.
Greskovich, C. & Rosolowski, J. H., Sintering of covalent solids. J. Am. Ceram. Soc., 59(7–8) (1976), 336–343.
Böcker, W. & Hausner, H., Observations on the sintering characteristics of submicron silicon carbide powders. Science of Ceramics, 9 (1977), 168–175.
Hase, T. & Suzuki, H., Sinterability of submicron β-SiC prepared from siliconization of carbon black. Yogyo-Kyokai-Shi, 86(12) (1978), 606–611.
Böcker, W., Landfermann, H. & Hausner, H., Sintering of alpha silicon carbide with additions of aluminum. Powder Met. Int., 11(2) (1979), 83–85.
Okabe, Y., Hojo, J. & Kato, A., Formation of fine silicon carbide powders by a vapor phase method. J. Less-Common Met., 68(1) (1979), 29–41.
Okabe, Y., Hojo, J. & Kato, A., Formation of silicon carbide powders by the vapor phase reaction of the SiH4-CH4-H2 system. Nippon-Kagaku-Kaishi, (2) (1980), 188–193.
Kato, A., Okabe, Y. & Hojo, J., Application of plasma jet for the preparation of ultrafine silicon carbide powders by vapor phase reaction. Funtai-Oyobi-Funmatsuyakin, 27(1) (1980), 32–34.
Okabe, Y., Miyachi, K., Hojo, J. & Kato, A., Sintering behaviour of ultrafine silicon carbide powders obtained by a vapor phase reaction. Nippon-Kagaku-Kaishi (Special Articles on Chemistry of Inorganic Materials), (9) (1981), 1363–1370.
Miyachi, K., Okabe, Y., Hojo, J. & Kato, A., Sintering of ultrafine silicon carbide powders by using boron and carbon as sintering aids. Nippon-Kagaku-Kaishi, (1) (1983), 28–33.
Hojo, J., Miyachi, K., Okabe, Y. & Kato, A., Effect of chemical composition on the sinterability of ultrafine SiC powders. J. Am. Ceram. Soc, 66(7) (1983), C114–C115.
Tsuda, H., Hojo, J. & Kato, A., Effect of binary powder mixing in sintering of fine silicon carbide. Funtai-Oyobi-Funmatsuyakin, 31(1) (1984), 1–7.
Prochazka, S., Sintering of silicon carbide. In Materials Science Research, Vol. 9, Mass Transport Phenomena in Ceramics, ed. A. R. Cooper & A. H. Heuer. Plenum Press, New York, 1975, pp. 421–431.
Hase, T. & Suzuki, H., Initial-stage sintering of β-SiC with concurrent boron and carbon additions. Yogyo-Kyokai-Shi, 88(5) (1980), 258–264.
Yamamoto, M., Present situation of SiC powder. Ceramics Japan, 22(1) (1987), 46–51.
Editor information
Editors and Affiliations
Rights and permissions
Copyright information
© 1991 Elsevier Science Publishers Ltd
About this chapter
Cite this chapter
Hojo, J. (1991). Sintering Behavior of Ultrafine Silicon Carbide Powder. In: Sömiya, S., Inomata, Y. (eds) Silicon Carbide Ceramics—1. Springer, Dordrecht. https://doi.org/10.1007/978-94-011-3842-0_7
Download citation
DOI: https://doi.org/10.1007/978-94-011-3842-0_7
Publisher Name: Springer, Dordrecht
Print ISBN: 978-1-85166-560-0
Online ISBN: 978-94-011-3842-0
eBook Packages: Springer Book Archive