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Crystal Chemistry of Silicon Carbide

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Silicon Carbide Ceramics—1

Abstract

Recent data on crystal chemistry and polytypes on silicon carbide are reviewed, and brief discussions are given on the origin of SiC polytypes, i.e. the thermal stability of basic polytypes such as 2H, 3C, 4H, 15R and 6H, the effects of foreign atoms incorporated in the lattice on the stability of the basic polytypes, and the stability of long-period polytypes.

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Authors
  1. Yoshizo Inomata
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Editors and Affiliations

  1. The Nishi Tokyo University, Japan

    Shigeyuki Sömiya (Professor and Professor Emeritus) (Professor and Professor Emeritus)

  2. Tokyo Institute of Technology, Japan

    Shigeyuki Sömiya (Professor and Professor Emeritus) (Professor and Professor Emeritus)

  3. National Institute for Research in Inorganic Materials, Tsukuba, Japan

    Yoshizo Inomata

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© 1991 Elsevier Science Publishers Ltd

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Inomata, Y. (1991). Crystal Chemistry of Silicon Carbide. In: Sömiya, S., Inomata, Y. (eds) Silicon Carbide Ceramics—1. Springer, Dordrecht. https://doi.org/10.1007/978-94-011-3842-0_1

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  • DOI: https://doi.org/10.1007/978-94-011-3842-0_1

  • Publisher Name: Springer, Dordrecht

  • Print ISBN: 978-1-85166-560-0

  • Online ISBN: 978-94-011-3842-0

  • eBook Packages: Springer Book Archive

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