Abstract
In this work the electro-optical properties of phosphorus doped microcrystalline hydrogenated silicon (µc-Si:H) films as a function of their deposition parameters are investigated.
The films were deposited in a plasma enhanced CVD system. It is observed that their properties are extremely sensitive to the r.f. power density in the studied range of 250 mW/cm2 to 500 mW/cm2.
Very low resistivitv films were obtained. For a r.f. power density of 500 mW/cm2, ρ=5×10-2 ohm.cm was obtained whilst, for a r.f. power density of 250 mW/cm2 a resistivity of ρ=3,7×102 ohm.cm is observed. These results show the sensitivity of the process to small changes in its variable deposition parameters. A low value of 28 meV for the activation energy was obtained with a r.f. power density of 500 mW/cm2 which can be due to a large density of microcrystals embedded in the amorphous tissue. The grain crystalline size as estimated from small angle X-Ray scattering experiments is in the range of 70 Å to 120 Å.
This promising material has immediate technological applications and it is believed that the experiments on the way will provide more understanding on the deposition phenomenology.
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© 1991 Springer Science+Business Media Dordrecht
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Dirani, E.A.T., de Andrade, A.M., Pereyra, I. (1991). Characterization of Highly Conductive Phosphorus Doped µc-Si:H Films. In: Luque, A., Sala, G., Palz, W., Dos Santos, G., Helm, P. (eds) Tenth E.C. Photovoltaic Solar Energy Conference. Springer, Dordrecht. https://doi.org/10.1007/978-94-011-3622-8_47
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DOI: https://doi.org/10.1007/978-94-011-3622-8_47
Publisher Name: Springer, Dordrecht
Print ISBN: 978-94-010-5607-6
Online ISBN: 978-94-011-3622-8
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