Abstract
In March 1991 a very first slicing test was performed by a very large size wire saw on a multicristalline silicon ingot having a 30×30cm cross section. The purpose of the test was to establish whether good surface finish and acceptable total thickness variations was obtainable on 180 microns thick wafers with a wire penetration over a continuous length of 30cm of material and over a continuous depth of 30 cm neither of both operating conditions having ever been done before.
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References
E.N.E. 9th EC-PVSEC. Late New (Freiburg, 1989)
K. Shirasawa, 21st IEEE PVSC (Kyoto, 1990)
Kyocera Corp, 5th Int’l, PVSEC (Kyoto, 1990)
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© 1991 Springer Science+Business Media Dordrecht
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Lievens, P.P., de Villers Grandchamps, T., Smekens, E.A., Smekens, G.R. (1991). Slicing, Cleaning and Etching thin 30×30cm wafers of Multicristalline Silicon. In: Luque, A., Sala, G., Palz, W., Dos Santos, G., Helm, P. (eds) Tenth E.C. Photovoltaic Solar Energy Conference. Springer, Dordrecht. https://doi.org/10.1007/978-94-011-3622-8_355
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DOI: https://doi.org/10.1007/978-94-011-3622-8_355
Publisher Name: Springer, Dordrecht
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