Abstract
This paper descrives the first results of GaAs/Si monolithic 2-terminal tandem solar cell grown by MOCVD, Thermal cycle annealing is effective in improving the crystallinity of the GaAs/Si. By using thermal cycle annealing, 2-terminal tandem solar cell on the GaAs/Si has exibited a conversion efficiency of 12.9% (AMO, 1SUN), and the corresponding shortcircuit current density, open-circuit voltage and fill factor are 15.27 mA/cm2, 1.358 V and 72.1%, respectively. Furthermore, Al0.25Ga0.75 As/Si tandem solar cell with a theoretical efficiency of 34% is proposed.
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© 1991 Springer Science+Business Media Dordrecht
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Umeno, M., Shimizu, H., Egawa, T., Soga, T., Jimbo, T. (1991). GaAs/Si Monolithic 2-Terminal Tandem Solar Cell Grown by Mocvd. In: Luque, A., Sala, G., Palz, W., Dos Santos, G., Helm, P. (eds) Tenth E.C. Photovoltaic Solar Energy Conference. Springer, Dordrecht. https://doi.org/10.1007/978-94-011-3622-8_354
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DOI: https://doi.org/10.1007/978-94-011-3622-8_354
Publisher Name: Springer, Dordrecht
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