Abstract
Two-junction two-terminal p-i-n cells based on amorphous silicon and related amorphous alloys have been extensively studied in order to obtain stable thin film devices. Cell design was based on a realistic model taking into account both optical and transport properties of the intrinsic layers. Experimental results are in fair agreement with calculated data and confirm the possibility of obtaining medium-high efficiency with high photostability.
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© 1991 Springer Science+Business Media Dordrecht
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Gramaccioni, C., Grillo, G., Galluzzi, F., Conte, G. (1991). Modelling and Characterization of Photovoltaic Tandem Cells with a-Si:H, a-SiC:H and a-SiGe:H Intrinsic Layers. In: Luque, A., Sala, G., Palz, W., Dos Santos, G., Helm, P. (eds) Tenth E.C. Photovoltaic Solar Energy Conference. Springer, Dordrecht. https://doi.org/10.1007/978-94-011-3622-8_34
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DOI: https://doi.org/10.1007/978-94-011-3622-8_34
Publisher Name: Springer, Dordrecht
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