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A New Approach for Characterizing Surface Interface and Bulk Defects in a-Si:H

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Tenth E.C. Photovoltaic Solar Energy Conference

Abstract

A new analysis approach which combines photoconductivity and photothermal deflection spectroscopies in a-Si:H is presented. An exponential distribution of defect states along the film is assumed, in agreement with recent experimental and theoretical results. Fits of experimental data in 1–3 eV energy range allow to profile electronic defects.

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Author information

Authors and Affiliations

  1. Istituto Elettrotecnico Nazionale Galileo Ferraris, Strada delle Cacce, 91, 10135, Turin, Italy

    G. Amato

Authors
  1. G. Amato
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Editor information

Editors and Affiliations

  1. Universidad Politécnica, Madrid, Spain

    A. Luque  & G. Sala  & 

  2. Commission of the European Communities, Brussels, Belgium

    W. Palz

  3. Secretaria de Estado da Energia, Lisbon, Portugal

    G. Dos Santos

  4. WIP, Munich, F.R. Germany

    P. Helm

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© 1991 Springer Science+Business Media Dordrecht

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Amato, G. (1991). A New Approach for Characterizing Surface Interface and Bulk Defects in a-Si:H. In: Luque, A., Sala, G., Palz, W., Dos Santos, G., Helm, P. (eds) Tenth E.C. Photovoltaic Solar Energy Conference. Springer, Dordrecht. https://doi.org/10.1007/978-94-011-3622-8_33

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  • DOI: https://doi.org/10.1007/978-94-011-3622-8_33

  • Publisher Name: Springer, Dordrecht

  • Print ISBN: 978-94-010-5607-6

  • Online ISBN: 978-94-011-3622-8

  • eBook Packages: Springer Book Archive

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