Abstract
a-SiC:H and a-SiC:H:F films have been prepared by reactive sputtering in mixtures of argon, hydrogen, methane or freon mixtures with different concentrations. The optical and electrical properties, the chemical bonding configuration and the density of defects in these materials have been studied in order to understand how the introduction of F influences the physical properties of the a-SiC random network.
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© 1991 Springer Science+Business Media Dordrecht
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Demichelis, F., Pirri, C.F., Tresso, E., Stapinski, T., Boarino, L., Rava, P. (1991). A Comparison between Fluorinated and Hydrogenated Amorphous Silicon Carbide Prepared by Reactive Sputtering. In: Luque, A., Sala, G., Palz, W., Dos Santos, G., Helm, P. (eds) Tenth E.C. Photovoltaic Solar Energy Conference. Springer, Dordrecht. https://doi.org/10.1007/978-94-011-3622-8_31
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DOI: https://doi.org/10.1007/978-94-011-3622-8_31
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