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Electric Field in A-Si Solar Cells Measured by Electron-Beam Testing

  • Conference paper
Tenth E.C. Photovoltaic Solar Energy Conference

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Abstract

A method is presented for measuring the potential distribution in the bulk of a semiconductor, e.g. an a-Si solar cell, by means of an electron-beam tester. The sample preparation, which gives access to the bulk profile, is performed by etching a small crater with an ion beam without damaging the solar cell seriously. First measurements of the potential distribution in a commercial a-Si solar module are presented. The electric field in a cell can be derivated from the measurements and is shown also.

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Author information

Authors and Affiliations

  1. Fachbereich Physik, Universität Kaiserslautern, Postfach 3049, D-6750, Kaiserslautern, Germany

    A. Mayer, A. Jank & H. Schmoranzer

Authors
  1. A. Mayer
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  2. A. Jank
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  3. H. Schmoranzer
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Editor information

Editors and Affiliations

  1. Universidad Politécnica, Madrid, Spain

    A. Luque  & G. Sala  & 

  2. Commission of the European Communities, Brussels, Belgium

    W. Palz

  3. Secretaria de Estado da Energia, Lisbon, Portugal

    G. Dos Santos

  4. WIP, Munich, F.R. Germany

    P. Helm

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© 1991 Springer Science+Business Media Dordrecht

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Mayer, A., Jank, A., Schmoranzer, H. (1991). Electric Field in A-Si Solar Cells Measured by Electron-Beam Testing. In: Luque, A., Sala, G., Palz, W., Dos Santos, G., Helm, P. (eds) Tenth E.C. Photovoltaic Solar Energy Conference. Springer, Dordrecht. https://doi.org/10.1007/978-94-011-3622-8_280

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  • DOI: https://doi.org/10.1007/978-94-011-3622-8_280

  • Publisher Name: Springer, Dordrecht

  • Print ISBN: 978-94-010-5607-6

  • Online ISBN: 978-94-011-3622-8

  • eBook Packages: Springer Book Archive

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