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Potassium Ion Implantation Doping of the n-Layer for p-i-n Amorphous Silicon Solar Cells

  • Conference paper
Tenth E.C. Photovoltaic Solar Energy Conference

Abstract

Conductivity of potassium implanted amorphous silicon thin films is studied as a function of implanted dose and thickness of the implanted layer. A maximum room temperature conductivity of 1 (Ω·cm)-1 is found. This value is the highest ever reported in doped hydrogenated amorphous silicon. The corresponding conductivity activation energy is 0.05 eV. These values are obtained by quenching the material from 200°C to room temperature. No cooling rate dependence is found after hydrogenation by a Kaufmann ion source, showing a hydrogen related stabilization. In p-i-n cells, such a highly conductive n +-layer has the potential to improve the cell open circuit voltage (V oc ) through an increase of the built-in potential.

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Author information

Authors and Affiliations

  1. CNR-LAMEL, via Castagnoli 1, 40126, Bologna, Italy

    R. Rizzoli, C. Summonte & R. Galloni

  2. Dipartimento di Chimica Applicata e Scienza dei Materiali, via Risorgimento 2, 40136, Bologna, Italy

    F. Zignani

  3. Physics Institute, University of Aarhus, Aarhus C., DK8000, Denmark

    A. Nylandsted Larsen

Authors
  1. R. Rizzoli
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  2. C. Summonte
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  3. R. Galloni
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  4. F. Zignani
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  5. A. Nylandsted Larsen
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Editor information

Editors and Affiliations

  1. Universidad Politécnica, Madrid, Spain

    A. Luque  & G. Sala  & 

  2. Commission of the European Communities, Brussels, Belgium

    W. Palz

  3. Secretaria de Estado da Energia, Lisbon, Portugal

    G. Dos Santos

  4. WIP, Munich, F.R. Germany

    P. Helm

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© 1991 Springer Science+Business Media Dordrecht

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Rizzoli, R., Summonte, C., Galloni, R., Zignani, F., Larsen, A.N. (1991). Potassium Ion Implantation Doping of the n-Layer for p-i-n Amorphous Silicon Solar Cells. In: Luque, A., Sala, G., Palz, W., Dos Santos, G., Helm, P. (eds) Tenth E.C. Photovoltaic Solar Energy Conference. Springer, Dordrecht. https://doi.org/10.1007/978-94-011-3622-8_274

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  • DOI: https://doi.org/10.1007/978-94-011-3622-8_274

  • Publisher Name: Springer, Dordrecht

  • Print ISBN: 978-94-010-5607-6

  • Online ISBN: 978-94-011-3622-8

  • eBook Packages: Springer Book Archive

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