Optimization of Antireflection Film Structures for Surface-Passivated Crystalline Silicon Solar Cells using Spectroscopic Ellipsometry

Saitoh, Tadashi; Kamataki, Osamu; Iida, Shigeo

doi:10.1007/978-94-011-3622-8_16

Optimization of Antireflection Film Structures for Surface-Passivated Crystalline Silicon Solar Cells using Spectroscopic Ellipsometry

Tadashi Saitoh⁵,
Osamu Kamataki⁵ &
Shigeo Iida⁵

Conference paper

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Abstract

Antireflection film structures for surface-passivated silicon solar cells have been optimized using complex refractive indices measured by spectroscopic el1ipsometry. A maximum short-circuit current density of 44.8mA/cm² is calculated for a V-grooved surface with an MgF₂/SiN_x:H/SiO₂ triple layer, while 43.1 mA/cm² for a flat surface with an MgF₂/ZnS/SiO₂ layer. A maximum efficiency of 27.8% is predicted for a completely light-trapped, thin cell with a low surface recombination velocity of 10 cm/s.

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Authors and Affiliations

Tokyo University of Agriculture and Technology, Koganei, Tokyo, 184, Japan
Tadashi Saitoh, Osamu Kamataki & Shigeo Iida

Authors

Tadashi Saitoh
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Osamu Kamataki
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Shigeo Iida
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Editors and Affiliations

Universidad Politécnica, Madrid, Spain
A. Luque & G. Sala &
Commission of the European Communities, Brussels, Belgium
W. Palz
Secretaria de Estado da Energia, Lisbon, Portugal
G. Dos Santos
WIP, Munich, F.R. Germany
P. Helm

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Saitoh, T., Kamataki, O., Iida, S. (1991). Optimization of Antireflection Film Structures for Surface-Passivated Crystalline Silicon Solar Cells using Spectroscopic Ellipsometry. In: Luque, A., Sala, G., Palz, W., Dos Santos, G., Helm, P. (eds) Tenth E.C. Photovoltaic Solar Energy Conference. Springer, Dordrecht. https://doi.org/10.1007/978-94-011-3622-8_16

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DOI: https://doi.org/10.1007/978-94-011-3622-8_16
Publisher Name: Springer, Dordrecht
Print ISBN: 978-94-010-5607-6
Online ISBN: 978-94-011-3622-8
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