Mixed-type circuits with distributed and lumped parameters as correct models for integrated structures

Abstract

The technology of integrated circuits imposes upon their designers the need to deal with structures with distributed parameters. Figure 4.1 shows a schematic diagram of part of a digital integrated chip, consisting of an n MOS transistor with gate (G), drain (D) and source (S) as terminals, and its thin-film connection with the rest of the chip. This on-chip connection can be made by metals (Al, W), polycristaline silicon (polysilicon) or metal suicides (WSi ₂ ). Alternative materials to oxide-passivated silicon substrates are saphire and gallium arsenide (Saraswat and Mohammadi [1982], Yuan et al. [1982], Passlack et al. [1990]).