Abstract
Most of the semiconductor devices are formed from single crystals. Their growth has improved substantially from conventional bulk growth methods to tailored epitaxial layer-for-layer deposition, creating the cleanest, currently available semiconductors with the least density of lattice defects, as well as totally new artificial materials with tailored material properties, such as ultrathin superlattices.
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© 1992 Springer Science+Business Media New York
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Böer, K.W. (1992). Crystal Growth, Epitaxy. In: Survey of Semiconductor Physics. Springer, Dordrecht. https://doi.org/10.1007/978-94-011-2912-1_5
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DOI: https://doi.org/10.1007/978-94-011-2912-1_5
Publisher Name: Springer, Dordrecht
Print ISBN: 978-94-010-5293-1
Online ISBN: 978-94-011-2912-1
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