Abstract
Drift and diffusion velocities cannot exceed with increasing external field or concentration gradients velocity values close to the thermal rms velocity. This limitation influences certain aspects of Schottky barrier or junction device performances, including the shape of its current-voltage characteristics near reverse saturation.
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© 1992 Springer Science+Business Media New York
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Böer, K.W. (1992). Carrier Velocity Limitation. In: Survey of Semiconductor Physics. Springer, Dordrecht. https://doi.org/10.1007/978-94-011-2912-1_19
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DOI: https://doi.org/10.1007/978-94-011-2912-1_19
Publisher Name: Springer, Dordrecht
Print ISBN: 978-94-010-5293-1
Online ISBN: 978-94-011-2912-1
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