Abstract
The bias-induced shift and deformation of the space charge near the boundary between a metal of sufficiently high work function and a semiconductor determines the corresponding changes in the current. An understanding of this interrelation is the key for deriving the current-voltage characteristics of the Schottky barrier device.
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© 1992 Springer Science+Business Media New York
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Böer, K.W. (1992). The Schottky Barrier. In: Survey of Semiconductor Physics. Springer, Dordrecht. https://doi.org/10.1007/978-94-011-2912-1_14
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DOI: https://doi.org/10.1007/978-94-011-2912-1_14
Publisher Name: Springer, Dordrecht
Print ISBN: 978-94-010-5293-1
Online ISBN: 978-94-011-2912-1
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