Abstract
A university research reactor is employed to irradiate electronic components to assess radiation induced damage. The reactor facility, irradiation procedure and dosimetry are described. Semiconductor devices are irradiated following guidance set forth in military standards (MIL-STD-883C). Electrical properties of irradiated components are characterized and compared with pre-irradiation performance parameters to assess the degradation of critical parameters as a function of neutron fluence. Future experiments will investigate real-time irradiation damage effects as functions of dose rate and fluence.
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© 1993 Springer Science+Business Media Dordrecht
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Bennion, J.S., Sandquist, G.M., Sheehan, P.S., Rogers, V.C. (1993). Irradiation Damage Assessment of Electronics. In: DeWitt, R.N., Duston, D., Hyder, A.K. (eds) The Behavior of Systems in the Space Environment. NATO ASI Series, vol 245. Springer, Dordrecht. https://doi.org/10.1007/978-94-011-2048-7_40
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DOI: https://doi.org/10.1007/978-94-011-2048-7_40
Publisher Name: Springer, Dordrecht
Print ISBN: 978-94-010-4907-8
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